Forward-bias tunneling at defect clusters in silicon emitter junctions

High values of the ideality factor n, in the range 1–6, have been found at low temperatures in highly doped n++p+ junctions with phosphorous and gallium or boron diffusion profiles. By studying the thermal activation of the forward current it has been possible to establish that tunneling related to...

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Veröffentlicht in:	Journal of applied physics 1991-04, Vol.69 (8), p.4418-4425
Hauptverfasser:	ANDERSSON, G. I, ENGSTROM, O
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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