The ion capturing effect of 5° SiOx alignment films in liquid crystal devices

The ion capturing effect of 5° SiOx alignment films in liquid crystal devices

We show that SiOx, deposited at 5° to the interior surface of a liquid crystal cell allows for a surprisingly substantial reduction in the ion concentration of liquid crystal devices. We have investigated this effect and found that this type of film, due to its surface morphology, captures ions from...

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Veröffentlicht in:Journal of applied physics 2010-09, Vol.108 (6)
Hauptverfasser: Huang, Yi, Bos, Philip J., Bhowmik, Achintya
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Bos, Philip J.
Bhowmik, Achintya
description We show that SiOx, deposited at 5° to the interior surface of a liquid crystal cell allows for a surprisingly substantial reduction in the ion concentration of liquid crystal devices. We have investigated this effect and found that this type of film, due to its surface morphology, captures ions from the liquid crystal material. Ion adsorption on 5° SiOx film obeys the Langmuir isotherm. Experimental results shown allow estimation of the ion capturing capacity of these films to be more than an order of 10 000/μm2. These types of materials are useful for new types of very low power liquid crystal devices such as e-books.
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title The ion capturing effect of 5° SiOx alignment films in liquid crystal devices
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