Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes

Thin-film InGaN photonic crystal (PhC) light-emitting diodes (LEDs) with a total semiconductor thickness of either 800 nm or 3.45   μ m were fabricated and characterized. Increased directional radiance relative to Lambertian emission was observed for both cases. The 800-nm-thick PhC LEDs yielded onl...

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Veröffentlicht in:	Appl. Phys. Lett 2010-08, Vol.97 (6), p.061118-061118-3
Hauptverfasser:	Rangel, Elizabeth, Matioli, Elison, Chen, Hung-Tse, Choi, Yong-Seok, Weisbuch, Claude, Speck, James S., Hu, Evelyn L.
Format:	Artikel
Sprache:	eng
Schlagworte:	ENGINEERING solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)
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