Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 ° C
Amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below 150 ° C . The a-SIZO TFT exhibited a field effect mobility of 21.6 cm 2 / V s and an on/off ratio of 10 7 . The stabilities of a-SIZO TFT and indium-zinc-oxide (IZO) TFT were...
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| Veröffentlicht in: | Applied physics letters 2010-09, Vol.97 (10), p.102102-102102-3 |
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| container_end_page | 102102-3 |
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| container_title | Applied physics letters |
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| creator | Chong, Eugene Chun, Yoon Soo Lee, Sang Yeol |
| description | Amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below
150
°
C
. The a-SIZO TFT exhibited a field effect mobility of
21.6
cm
2
/
V
s
and an on/off ratio of
10
7
. The stabilities of a-SIZO TFT and indium-zinc-oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage
(
V
th
)
compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in
V
th
in a-SIZO TFT without deteriorating mobility of higher than
21.6
cm
2
/
V
s
. |
| doi_str_mv | 10.1063/1.3479925 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3479925</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c265t-79e59bee2318998a8e21ebaee279ec1a6938e55de7a1572883cb342dc959521d3</originalsourceid><addsrcrecordid>eNp1kM1KAzEUhYMoWKsL3yBbF6m5STOTbIRS_IOCG13HTJLSyExSkhn8eSqfwSdzSos7V5dzzsddfAhdAp0Brfg1zPi8VoqJIzQBWteEA8hjNKGUclIpAaforJS3MQrG-QS9LrqUt5s0FFxCG2yKJEQXho58hWhx-gjO4-K73eIG26eM-02IeB3aDvfZxBLKWBa8zcn6UrzDjW_TOwZB8c83Xp6jk7Vpi7843Cl6ubt9Xj6Q1dP943KxIpZVoie18kI13jMOUilppGfgGzMW42LBVIpLL4TztQFRMym5bficOauEEgwcn6Kr_V-bUynZr_U2h87kTw1U79Ro0Ac1I3uzZ4sNvelDiv_Df370wY8Okf8CjkJtYA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 ° C</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Chong, Eugene ; Chun, Yoon Soo ; Lee, Sang Yeol</creator><creatorcontrib>Chong, Eugene ; Chun, Yoon Soo ; Lee, Sang Yeol</creatorcontrib><description>Amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below
150
°
C
. The a-SIZO TFT exhibited a field effect mobility of
21.6
cm
2
/
V
s
and an on/off ratio of
10
7
. The stabilities of a-SIZO TFT and indium-zinc-oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage
(
V
th
)
compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in
V
th
in a-SIZO TFT without deteriorating mobility of higher than
21.6
cm
2
/
V
s
.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3479925</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-09, Vol.97 (10), p.102102-102102-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c265t-79e59bee2318998a8e21ebaee279ec1a6938e55de7a1572883cb342dc959521d3</citedby><cites>FETCH-LOGICAL-c265t-79e59bee2318998a8e21ebaee279ec1a6938e55de7a1572883cb342dc959521d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3479925$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,781,785,795,1560,4513,27929,27930,76389,76395</link.rule.ids></links><search><creatorcontrib>Chong, Eugene</creatorcontrib><creatorcontrib>Chun, Yoon Soo</creatorcontrib><creatorcontrib>Lee, Sang Yeol</creatorcontrib><title>Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 ° C</title><title>Applied physics letters</title><description>Amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below
150
°
C
. The a-SIZO TFT exhibited a field effect mobility of
21.6
cm
2
/
V
s
and an on/off ratio of
10
7
. The stabilities of a-SIZO TFT and indium-zinc-oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage
(
V
th
)
compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in
V
th
in a-SIZO TFT without deteriorating mobility of higher than
21.6
cm
2
/
V
s
.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kM1KAzEUhYMoWKsL3yBbF6m5STOTbIRS_IOCG13HTJLSyExSkhn8eSqfwSdzSos7V5dzzsddfAhdAp0Brfg1zPi8VoqJIzQBWteEA8hjNKGUclIpAaforJS3MQrG-QS9LrqUt5s0FFxCG2yKJEQXho58hWhx-gjO4-K73eIG26eM-02IeB3aDvfZxBLKWBa8zcn6UrzDjW_TOwZB8c83Xp6jk7Vpi7843Cl6ubt9Xj6Q1dP943KxIpZVoie18kI13jMOUilppGfgGzMW42LBVIpLL4TztQFRMym5bficOauEEgwcn6Kr_V-bUynZr_U2h87kTw1U79Ro0Ac1I3uzZ4sNvelDiv_Df370wY8Okf8CjkJtYA</recordid><startdate>20100906</startdate><enddate>20100906</enddate><creator>Chong, Eugene</creator><creator>Chun, Yoon Soo</creator><creator>Lee, Sang Yeol</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100906</creationdate><title>Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 ° C</title><author>Chong, Eugene ; Chun, Yoon Soo ; Lee, Sang Yeol</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c265t-79e59bee2318998a8e21ebaee279ec1a6938e55de7a1572883cb342dc959521d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chong, Eugene</creatorcontrib><creatorcontrib>Chun, Yoon Soo</creatorcontrib><creatorcontrib>Lee, Sang Yeol</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chong, Eugene</au><au>Chun, Yoon Soo</au><au>Lee, Sang Yeol</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 ° C</atitle><jtitle>Applied physics letters</jtitle><date>2010-09-06</date><risdate>2010</risdate><volume>97</volume><issue>10</issue><spage>102102</spage><epage>102102-3</epage><pages>102102-102102-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below
150
°
C
. The a-SIZO TFT exhibited a field effect mobility of
21.6
cm
2
/
V
s
and an on/off ratio of
10
7
. The stabilities of a-SIZO TFT and indium-zinc-oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage
(
V
th
)
compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in
V
th
in a-SIZO TFT without deteriorating mobility of higher than
21.6
cm
2
/
V
s
.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3479925</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2010-09, Vol.97 (10), p.102102-102102-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3479925 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 ° C |
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