Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 ° C

Amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below 150 ° C . The a-SIZO TFT exhibited a field effect mobility of 21.6 cm 2 / V s and an on/off ratio of 10 7 . The stabilities of a-SIZO TFT and indium-zinc-oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage ( V th ) compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in V th in a-SIZO TFT without deteriorating mobility of higher than 21.6 cm 2 / V s .