Are Al2O3 and MgO tunnel barriers suitable for spin injection in graphene?
We report on the structural impact on graphene and multi-layers graphene of the growth by sputtering of tunnel barriers. Sputtered Al2O3 and MgO barriers were chosen for their well-known efficiency as spin injectors in spintronics devices. The impact of the growth on the structure of graphene and up...
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| Veröffentlicht in: | Applied physics letters 2010-08, Vol.97 (9) |
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| container_title | Applied physics letters |
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| creator | Dlubak, B. Seneor, P. Anane, A. Barraud, C. Deranlot, C. Deneuve, D. Servet, B. Mattana, R. Petroff, F. Fert, A. |
| description | We report on the structural impact on graphene and multi-layers graphene of the growth by sputtering of tunnel barriers. Sputtered Al2O3 and MgO barriers were chosen for their well-known efficiency as spin injectors in spintronics devices. The impact of the growth on the structure of graphene and up to 4-layer flakes was analyzed by Raman spectroscopy. This study reveals that for Al2O3 growth, the impact is moderate for a monolayer and decreases sharply for bilayers and above. In the case of MgO all the flakes underwent a strong amorphization. Moreover, this reveals that while single layer graphene is believed to offer the best spin transport properties, the better robustness of multilayer graphene may ultimately make it a better choice for spintronics devices. |
| doi_str_mv | 10.1063/1.3476339 |
| format | Article |
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| ispartof | Applied physics letters, 2010-08, Vol.97 (9) |
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| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3476339 |
| source | American Institute of Physics (AIP) Journals; AIP Digital Archive; Alma/SFX Local Collection |
| title | Are Al2O3 and MgO tunnel barriers suitable for spin injection in graphene? |
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