Defect-free growth of Al x Ga1− x As by liquid-phase epitaxy on V-grooved (001) GaAs substrates

The crystalline quality of AlxGa1−xAs grown on a V-grooved (001) GaAs substrate is characterized by low-temperature cathodoluminescence and transmission electron microscopy. High-crystalline perfection visualized by narrow neutral donor bound exciton luminescence is attained above the groove. Growth...

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Veröffentlicht in:	Journal of applied physics 1991-06, Vol.69 (12), p.8154-8157
Hauptverfasser:	Rechenberg, I., Stoeff, S., Krahl, M., Bimberg, D., Höpner, A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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