Carrier dynamics in isoelectronic ZnSe1−xOx semiconductors
This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1−xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces indu...
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| Veröffentlicht in: | Applied physics letters 2010-07, Vol.97 (4) |
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| container_title | Applied physics letters |
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| creator | Lin, Y. C. Chung, H. L. Chou, W. C. Chen, W. K. Chang, W. H. Chen, C. Y. Chyi, J. I. |
| description | This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1−xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent β followed by its monotonic increase with increasing temperature. |
| doi_str_mv | 10.1063/1.3473776 |
| format | Article |
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C. ; Chung, H. L. ; Chou, W. C. ; Chen, W. K. ; Chang, W. H. ; Chen, C. Y. ; Chyi, J. I.</creator><creatorcontrib>Lin, Y. C. ; Chung, H. L. ; Chou, W. C. ; Chen, W. K. ; Chang, W. H. ; Chen, C. Y. ; Chyi, J. I.</creatorcontrib><description>This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1−xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent β followed by its monotonic increase with increasing temperature.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3473776</identifier><language>eng</language><ispartof>Applied physics letters, 2010-07, Vol.97 (4)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-6a065c656ee9633ea11e72d82bbd1f501c942b623d612aefe2371a84002fa87c3</citedby><cites>FETCH-LOGICAL-c295t-6a065c656ee9633ea11e72d82bbd1f501c942b623d612aefe2371a84002fa87c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Lin, Y. C.</creatorcontrib><creatorcontrib>Chung, H. L.</creatorcontrib><creatorcontrib>Chou, W. C.</creatorcontrib><creatorcontrib>Chen, W. K.</creatorcontrib><creatorcontrib>Chang, W. H.</creatorcontrib><creatorcontrib>Chen, C. Y.</creatorcontrib><creatorcontrib>Chyi, J. I.</creatorcontrib><title>Carrier dynamics in isoelectronic ZnSe1−xOx semiconductors</title><title>Applied physics letters</title><description>This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1−xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. 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I.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, Y. C.</au><au>Chung, H. L.</au><au>Chou, W. C.</au><au>Chen, W. K.</au><au>Chang, W. H.</au><au>Chen, C. Y.</au><au>Chyi, J. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carrier dynamics in isoelectronic ZnSe1−xOx semiconductors</atitle><jtitle>Applied physics letters</jtitle><date>2010-07-26</date><risdate>2010</risdate><volume>97</volume><issue>4</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1−xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent β followed by its monotonic increase with increasing temperature.</abstract><doi>10.1063/1.3473776</doi></addata></record> |
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| source | AIP Digital Archive; Alma/SFX Local Collection; Scitation Publications |
| title | Carrier dynamics in isoelectronic ZnSe1−xOx semiconductors |
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