ZnSe p-n junctions produced by metalorganic molecular-beam epitaxy

ZnSe p-n junctions produced by metalorganic molecular-beam epitaxy

The p-n junction in nitrogen-doped p-type ZnSe/undoped n-type ZnSe on n-type GaAs (100) is successfully produced by metalorganic molecular-beam epitaxy. p-type conduction of ZnSe is achieved as a consequence of high nitrogen doping (5×1018–1×1019 cm−3). The data points of C−2 (C: capacitance) agains...

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Veröffentlicht in:Journal of applied physics 1990-07, Vol.68 (2), p.880-882
Hauptverfasser: MIGITA, M, TAIKE, A, YAMAMOTO, H
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Sprache:eng
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Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Optical materials
Optics
Physics
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TAIKE, A
YAMAMOTO, H
description The p-n junction in nitrogen-doped p-type ZnSe/undoped n-type ZnSe on n-type GaAs (100) is successfully produced by metalorganic molecular-beam epitaxy. p-type conduction of ZnSe is achieved as a consequence of high nitrogen doping (5×1018–1×1019 cm−3). The data points of C−2 (C: capacitance) against voltage of the p-n junction are approximated by a straight line and the diffusion potential estimated from the plots is about 2.4 eV. Electron-beam-induced current also directly demonstrates the formation of a ZnSe p–n junction. Furthermore, blue emission is observed from the 5-V foward-biased ZnSe p-n junction at 77 K.
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subjects Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Optical materials
Optics
Physics
title ZnSe p-n junctions produced by metalorganic molecular-beam epitaxy
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