A photoluminescence study of hydrogenated GaAs grown on a InP substrate by metalorganic chemical vapor deposition
The effects of hydrogenation on the low-temperature (5 K) photoluminescence properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated. An emission band at ∼1.4 eV originating from the GaAs/InP interfacial region shows a 30-fold increase in intensity relativ...
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| Veröffentlicht in: | Journal of applied physics 1990-07, Vol.68 (2), p.902-905 |
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| container_end_page | 905 |
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| container_issue | 2 |
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| container_title | Journal of applied physics |
| container_volume | 68 |
| creator | SWAMINATHAN, V CHAKRABARTI, U. K HOBSON, W. S CARUSO, R LOPATA, J PEARTON, S. J LUFTMAN, H. S |
| description | The effects of hydrogenation on the low-temperature (5 K) photoluminescence properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated. An emission band at ∼1.4 eV originating from the GaAs/InP interfacial region shows a 30-fold increase in intensity relative to the GaAs band-edge emission after exposure to hydrogen plasma for 30 min at 250 °C. This improvement in intensity is attributed to hydrogen passivation of defects at the heterointerface caused by the large (≊4%) lattice mismatch between GaAs and InP. Annealing the hydrogenated sample at 350 °C nullifies the passivation effect. Further, the 1.4-eV band shifts to higher energy on annealing the sample in the temperature range 150–450 °C with the hydrogenated sample exhibiting a larger shift than the untreated sample. It is suggested that the annealing-induced peak shift arises due to modification of the interface and that it is greater in the hydrogenated sample compared to the untreated sample. |
| doi_str_mv | 10.1063/1.346757 |
| format | Article |
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K ; HOBSON, W. S ; CARUSO, R ; LOPATA, J ; PEARTON, S. J ; LUFTMAN, H. S</creator><creatorcontrib>SWAMINATHAN, V ; CHAKRABARTI, U. K ; HOBSON, W. S ; CARUSO, R ; LOPATA, J ; PEARTON, S. J ; LUFTMAN, H. S</creatorcontrib><description>The effects of hydrogenation on the low-temperature (5 K) photoluminescence properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated. An emission band at ∼1.4 eV originating from the GaAs/InP interfacial region shows a 30-fold increase in intensity relative to the GaAs band-edge emission after exposure to hydrogen plasma for 30 min at 250 °C. This improvement in intensity is attributed to hydrogen passivation of defects at the heterointerface caused by the large (≊4%) lattice mismatch between GaAs and InP. Annealing the hydrogenated sample at 350 °C nullifies the passivation effect. Further, the 1.4-eV band shifts to higher energy on annealing the sample in the temperature range 150–450 °C with the hydrogenated sample exhibiting a larger shift than the untreated sample. 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Annealing the hydrogenated sample at 350 °C nullifies the passivation effect. Further, the 1.4-eV band shifts to higher energy on annealing the sample in the temperature range 150–450 °C with the hydrogenated sample exhibiting a larger shift than the untreated sample. It is suggested that the annealing-induced peak shift arises due to modification of the interface and that it is greater in the hydrogenated sample compared to the untreated sample.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Physics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNpFkE1Lw0AYhBdRsFbBn_BeBC-p--ZjP46laC0U9KDnsF9pI8lu3E2V_nsjFTwNzDwMwxByi3SBlBUPuChKxit-RmZIhcx4VdFzMqM0x0xILi_JVUoflCKKQs7I5xKGfRhDd-hb75Jx3jhI48EeITSwP9oYds6r0VlYq2WCXQzfHoIHBRv_Cumg0xinGPQRejeqLsSd8q0Bs3d9a1QHX2oIEawbQmrHNvhrctGoLrmbP52T96fHt9Vztn1Zb1bLbWaKHMfMsJLZ3GjHJTU2x7IUjjGGyLWsJsPahjPDJDKh81JTwbig6BqFqtSi1MWc3J96TQwpRdfUQ2x7FY810vr3qhrr01UTendCB5WmyU1U3rTpn5c5q3heFT8SEmm4</recordid><startdate>19900715</startdate><enddate>19900715</enddate><creator>SWAMINATHAN, V</creator><creator>CHAKRABARTI, U. 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S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A photoluminescence study of hydrogenated GaAs grown on a InP substrate by metalorganic chemical vapor deposition</atitle><jtitle>Journal of applied physics</jtitle><date>1990-07-15</date><risdate>1990</risdate><volume>68</volume><issue>2</issue><spage>902</spage><epage>905</epage><pages>902-905</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The effects of hydrogenation on the low-temperature (5 K) photoluminescence properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated. An emission band at ∼1.4 eV originating from the GaAs/InP interfacial region shows a 30-fold increase in intensity relative to the GaAs band-edge emission after exposure to hydrogen plasma for 30 min at 250 °C. This improvement in intensity is attributed to hydrogen passivation of defects at the heterointerface caused by the large (≊4%) lattice mismatch between GaAs and InP. Annealing the hydrogenated sample at 350 °C nullifies the passivation effect. Further, the 1.4-eV band shifts to higher energy on annealing the sample in the temperature range 150–450 °C with the hydrogenated sample exhibiting a larger shift than the untreated sample. It is suggested that the annealing-induced peak shift arises due to modification of the interface and that it is greater in the hydrogenated sample compared to the untreated sample.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.346757</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics |
| title | A photoluminescence study of hydrogenated GaAs grown on a InP substrate by metalorganic chemical vapor deposition |
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