Soft-solution route to ZnO nanowall array with low threshold power density
ZnO nanowall array (ZNWA) has been directionally grown on the buffer layer of ZnO nanoparticles dip-coated on Si-wafer under a soft solution process. Nanowalls on substrate are in most suitable shape and orientation not only as an optical trap but also as an optical waveguide due to their unique gro...
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Veröffentlicht in: | Applied physics letters 2010-07, Vol.97 (4), p.043109-043109-3 |
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container_title | Applied physics letters |
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creator | Jang, Eue-Soon Chen, Xiaoyuan Won, Jung-Hee Chung, Jae-Hun Jang, Du-Jeon Kim, Young-Woon Choy, Jin-Ho |
description | ZnO nanowall array (ZNWA) has been directionally grown on the buffer layer of ZnO nanoparticles dip-coated on Si-wafer under a soft solution process. Nanowalls on substrate are in most suitable shape and orientation not only as an optical trap but also as an optical waveguide due to their unique growth habit,
V
[
01
1
¯
0
]
⪢
V
[
0001
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≈
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[
000
1
¯
]
. Consequently, the stimulated emission at 384 nm through nanowalls is generated by the threshold power density of only
25
kW
/
cm
2
. Such UV lasing properties are superior to those of previously reported ZnO nanorod arrays. Moreover, there is no green (defect) emission due to the mild procedure to synthesize ZNWA. |
doi_str_mv | 10.1063/1.3466910 |
format | Article |
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V
[
01
1
¯
0
]
⪢
V
[
0001
]
≈
V
[
000
1
¯
]
. Consequently, the stimulated emission at 384 nm through nanowalls is generated by the threshold power density of only
25
kW
/
cm
2
. Such UV lasing properties are superior to those of previously reported ZnO nanorod arrays. Moreover, there is no green (defect) emission due to the mild procedure to synthesize ZNWA.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3466910</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-07, Vol.97 (4), p.043109-043109-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c318t-42d6210b3a16126b5329bf38a43726ced80a6ec39d6cea65385c709d3dd2f6133</citedby><cites>FETCH-LOGICAL-c318t-42d6210b3a16126b5329bf38a43726ced80a6ec39d6cea65385c709d3dd2f6133</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3466910$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76353,76359</link.rule.ids></links><search><creatorcontrib>Jang, Eue-Soon</creatorcontrib><creatorcontrib>Chen, Xiaoyuan</creatorcontrib><creatorcontrib>Won, Jung-Hee</creatorcontrib><creatorcontrib>Chung, Jae-Hun</creatorcontrib><creatorcontrib>Jang, Du-Jeon</creatorcontrib><creatorcontrib>Kim, Young-Woon</creatorcontrib><creatorcontrib>Choy, Jin-Ho</creatorcontrib><title>Soft-solution route to ZnO nanowall array with low threshold power density</title><title>Applied physics letters</title><description>ZnO nanowall array (ZNWA) has been directionally grown on the buffer layer of ZnO nanoparticles dip-coated on Si-wafer under a soft solution process. Nanowalls on substrate are in most suitable shape and orientation not only as an optical trap but also as an optical waveguide due to their unique growth habit,
V
[
01
1
¯
0
]
⪢
V
[
0001
]
≈
V
[
000
1
¯
]
. Consequently, the stimulated emission at 384 nm through nanowalls is generated by the threshold power density of only
25
kW
/
cm
2
. Such UV lasing properties are superior to those of previously reported ZnO nanorod arrays. Moreover, there is no green (defect) emission due to the mild procedure to synthesize ZNWA.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAURYMoWEcX_oNsXXTMy2vTduFCBj8ZmIW6cRPSJKWV2gxJhtJ_b8cZl64uFw4X7iHkGtgSmMBbWGImRAXshCTAiiJFgPKUJIwxTEWVwzm5COFrrjlHTMjrm2tiGly_i50bqHe7aGl09HPY0EENblR9T5X3aqJjF1vau5HG1tvQut7QrRutp8YOoYvTJTlrVB_s1TEX5OPx4X31nK43Ty-r-3WqEcqYZtwIDqxGBQK4qHPkVd1gqTIsuNDWlEwJq7Eyc1EixzLXBasMGsMbAYgLcnPY1d6F4G0jt777Vn6SwOReggR5lDCzdwc26C6q_cX_4b0J-WdC_prAH-pZZC8</recordid><startdate>20100726</startdate><enddate>20100726</enddate><creator>Jang, Eue-Soon</creator><creator>Chen, Xiaoyuan</creator><creator>Won, Jung-Hee</creator><creator>Chung, Jae-Hun</creator><creator>Jang, Du-Jeon</creator><creator>Kim, Young-Woon</creator><creator>Choy, Jin-Ho</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100726</creationdate><title>Soft-solution route to ZnO nanowall array with low threshold power density</title><author>Jang, Eue-Soon ; Chen, Xiaoyuan ; Won, Jung-Hee ; Chung, Jae-Hun ; Jang, Du-Jeon ; Kim, Young-Woon ; Choy, Jin-Ho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c318t-42d6210b3a16126b5329bf38a43726ced80a6ec39d6cea65385c709d3dd2f6133</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jang, Eue-Soon</creatorcontrib><creatorcontrib>Chen, Xiaoyuan</creatorcontrib><creatorcontrib>Won, Jung-Hee</creatorcontrib><creatorcontrib>Chung, Jae-Hun</creatorcontrib><creatorcontrib>Jang, Du-Jeon</creatorcontrib><creatorcontrib>Kim, Young-Woon</creatorcontrib><creatorcontrib>Choy, Jin-Ho</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jang, Eue-Soon</au><au>Chen, Xiaoyuan</au><au>Won, Jung-Hee</au><au>Chung, Jae-Hun</au><au>Jang, Du-Jeon</au><au>Kim, Young-Woon</au><au>Choy, Jin-Ho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Soft-solution route to ZnO nanowall array with low threshold power density</atitle><jtitle>Applied physics letters</jtitle><date>2010-07-26</date><risdate>2010</risdate><volume>97</volume><issue>4</issue><spage>043109</spage><epage>043109-3</epage><pages>043109-043109-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>ZnO nanowall array (ZNWA) has been directionally grown on the buffer layer of ZnO nanoparticles dip-coated on Si-wafer under a soft solution process. Nanowalls on substrate are in most suitable shape and orientation not only as an optical trap but also as an optical waveguide due to their unique growth habit,
V
[
01
1
¯
0
]
⪢
V
[
0001
]
≈
V
[
000
1
¯
]
. Consequently, the stimulated emission at 384 nm through nanowalls is generated by the threshold power density of only
25
kW
/
cm
2
. Such UV lasing properties are superior to those of previously reported ZnO nanorod arrays. Moreover, there is no green (defect) emission due to the mild procedure to synthesize ZNWA.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3466910</doi><oa>free_for_read</oa></addata></record> |
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source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
title | Soft-solution route to ZnO nanowall array with low threshold power density |
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