Impact ionization fronts in semiconductors: Numerical evidence of superfast propagation due to nonlocalized preionization

We present numerical evidence of superfast propagation of ionizing fronts that occurs due to nonlocalized preionization of the depleted high-field region. In nonlinear dynamics terms, this traveling front mode of avalanche breakdown in a semiconductor corresponds to a pulled front propagating into a...

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Veröffentlicht in:	Journal of applied physics 2010-08, Vol.108 (3), p.034501-034501-4
Hauptverfasser:	Rodin, Pavel, Minarsky, Andrey, Grekhov, Igor
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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