Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates
We investigated InAs ultrathin films on flexible substrates. InAs layers grown on GaAs(001) are separated by epitaxial lift-off (ELO), followed by van der Waals bonding (VWB) on flexible substrates. We employed “normal” and “inverted” VWB; in the former, top and bottom sides are maintained during EL...
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| Veröffentlicht in: | Applied physics letters 2010-07, Vol.97 (1), p.012102-012102-3 |
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| container_title | Applied physics letters |
| container_volume | 97 |
| creator | Takita, Hayato Hashimoto, Norihiko Nguyen, Cong Thanh Kudo, Masahiro Akabori, Masashi Suzuki, Toshi-kazu |
| description | We investigated InAs
ultrathin films on
flexible substrates. InAs layers grown on GaAs(001) are separated by
epitaxial
lift-off (ELO),
followed by van der Waals bonding (VWB) on flexible substrates. We employed “normal” and
“inverted” VWB; in the former, top and bottom sides are maintained during ELO and VWB, while inverted in
the latter. From the InAs on flexible substrates, we fabricated Hall-bar devices with recess
etch-thinning,
using which electron transport properties depending on InAs layer thickness were
characterized. For the inverted VWB, we observe very high electron mobilities of
InAs
ultrathin films,
such as
∼
10
000
cm
2
/
V
s
for
∼
100
nm
thickness and
∼
7000
cm
2
/
V
s
for
∼
20
nm
. These carrier mobilities are highest not only for
thin
films on flexible substrates but also for InAs
thin films;
higher than those of InAs
films
grown on GaAs(111)A and membranes fabricated from them. |
| doi_str_mv | 10.1063/1.3459137 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3459137</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c499t-f2ec89d5fa36ea79e4e73fd377afddcc8cba463ad766d57aa49b15cef341c3053</originalsourceid><addsrcrecordid>eNp9kMFKAzEQhoMoWKsH3yBXha2bZnfTvQilVC0IXhSPIZtMNBKTJUmlfQDf25RWPUg9DTPzzT8zP0LnpByRsqFXZESruiWUHaABKRkrKCGTQzQoy5IWTVuTY3QS41tO6zGlA_Q5tyBT8A6nIFzsfUi4D76HkAxE7DVeuGnES5vb6dU4rI19z_UuCeNA4W6NoTdJrIyw2BqdCq81Fk7hD-GwgoCfhbARd94p415wXqQtrExnAcdlFzeyEE_Rkc4UnO3iED3dzB9nd8X9w-1iNr0vZNW2qdBjkJNW1VrQBgRroQJGtaKMCa2UlBPZiaqhQrGmUTUTomo7UkvQtCKSljUdooutrgw-xgCa98G8i7DmpOQb_zjhO_8ye71lo8z_JePdfvjbRP5jIu-zwOU-gQ8ffod5r_R_8N_TvgAbMJim</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Takita, Hayato ; Hashimoto, Norihiko ; Nguyen, Cong Thanh ; Kudo, Masahiro ; Akabori, Masashi ; Suzuki, Toshi-kazu</creator><creatorcontrib>Takita, Hayato ; Hashimoto, Norihiko ; Nguyen, Cong Thanh ; Kudo, Masahiro ; Akabori, Masashi ; Suzuki, Toshi-kazu</creatorcontrib><description>We investigated InAs
ultrathin films on
flexible substrates. InAs layers grown on GaAs(001) are separated by
epitaxial
lift-off (ELO),
followed by van der Waals bonding (VWB) on flexible substrates. We employed “normal” and
“inverted” VWB; in the former, top and bottom sides are maintained during ELO and VWB, while inverted in
the latter. From the InAs on flexible substrates, we fabricated Hall-bar devices with recess
etch-thinning,
using which electron transport properties depending on InAs layer thickness were
characterized. For the inverted VWB, we observe very high electron mobilities of
InAs
ultrathin films,
such as
∼
10
000
cm
2
/
V
s
for
∼
100
nm
thickness and
∼
7000
cm
2
/
V
s
for
∼
20
nm
. These carrier mobilities are highest not only for
thin
films on flexible substrates but also for InAs
thin films;
higher than those of InAs
films
grown on GaAs(111)A and membranes fabricated from them.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3459137</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-07, Vol.97 (1), p.012102-012102-3</ispartof><rights>American Institute of Physics</rights><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c499t-f2ec89d5fa36ea79e4e73fd377afddcc8cba463ad766d57aa49b15cef341c3053</citedby><cites>FETCH-LOGICAL-c499t-f2ec89d5fa36ea79e4e73fd377afddcc8cba463ad766d57aa49b15cef341c3053</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3459137$$EHTML$$P50$$Gscitation$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Takita, Hayato</creatorcontrib><creatorcontrib>Hashimoto, Norihiko</creatorcontrib><creatorcontrib>Nguyen, Cong Thanh</creatorcontrib><creatorcontrib>Kudo, Masahiro</creatorcontrib><creatorcontrib>Akabori, Masashi</creatorcontrib><creatorcontrib>Suzuki, Toshi-kazu</creatorcontrib><title>Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates</title><title>Applied physics letters</title><description>We investigated InAs
ultrathin films on
flexible substrates. InAs layers grown on GaAs(001) are separated by
epitaxial
lift-off (ELO),
followed by van der Waals bonding (VWB) on flexible substrates. We employed “normal” and
“inverted” VWB; in the former, top and bottom sides are maintained during ELO and VWB, while inverted in
the latter. From the InAs on flexible substrates, we fabricated Hall-bar devices with recess
etch-thinning,
using which electron transport properties depending on InAs layer thickness were
characterized. For the inverted VWB, we observe very high electron mobilities of
InAs
ultrathin films,
such as
∼
10
000
cm
2
/
V
s
for
∼
100
nm
thickness and
∼
7000
cm
2
/
V
s
for
∼
20
nm
. These carrier mobilities are highest not only for
thin
films on flexible substrates but also for InAs
thin films;
higher than those of InAs
films
grown on GaAs(111)A and membranes fabricated from them.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kMFKAzEQhoMoWKsH3yBXha2bZnfTvQilVC0IXhSPIZtMNBKTJUmlfQDf25RWPUg9DTPzzT8zP0LnpByRsqFXZESruiWUHaABKRkrKCGTQzQoy5IWTVuTY3QS41tO6zGlA_Q5tyBT8A6nIFzsfUi4D76HkAxE7DVeuGnES5vb6dU4rI19z_UuCeNA4W6NoTdJrIyw2BqdCq81Fk7hD-GwgoCfhbARd94p415wXqQtrExnAcdlFzeyEE_Rkc4UnO3iED3dzB9nd8X9w-1iNr0vZNW2qdBjkJNW1VrQBgRroQJGtaKMCa2UlBPZiaqhQrGmUTUTomo7UkvQtCKSljUdooutrgw-xgCa98G8i7DmpOQb_zjhO_8ye71lo8z_JePdfvjbRP5jIu-zwOU-gQ8ffod5r_R_8N_TvgAbMJim</recordid><startdate>20100705</startdate><enddate>20100705</enddate><creator>Takita, Hayato</creator><creator>Hashimoto, Norihiko</creator><creator>Nguyen, Cong Thanh</creator><creator>Kudo, Masahiro</creator><creator>Akabori, Masashi</creator><creator>Suzuki, Toshi-kazu</creator><general>American Institute of Physics</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100705</creationdate><title>Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates</title><author>Takita, Hayato ; Hashimoto, Norihiko ; Nguyen, Cong Thanh ; Kudo, Masahiro ; Akabori, Masashi ; Suzuki, Toshi-kazu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c499t-f2ec89d5fa36ea79e4e73fd377afddcc8cba463ad766d57aa49b15cef341c3053</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takita, Hayato</creatorcontrib><creatorcontrib>Hashimoto, Norihiko</creatorcontrib><creatorcontrib>Nguyen, Cong Thanh</creatorcontrib><creatorcontrib>Kudo, Masahiro</creatorcontrib><creatorcontrib>Akabori, Masashi</creatorcontrib><creatorcontrib>Suzuki, Toshi-kazu</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takita, Hayato</au><au>Hashimoto, Norihiko</au><au>Nguyen, Cong Thanh</au><au>Kudo, Masahiro</au><au>Akabori, Masashi</au><au>Suzuki, Toshi-kazu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates</atitle><jtitle>Applied physics letters</jtitle><date>2010-07-05</date><risdate>2010</risdate><volume>97</volume><issue>1</issue><spage>012102</spage><epage>012102-3</epage><pages>012102-012102-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We investigated InAs
ultrathin films on
flexible substrates. InAs layers grown on GaAs(001) are separated by
epitaxial
lift-off (ELO),
followed by van der Waals bonding (VWB) on flexible substrates. We employed “normal” and
“inverted” VWB; in the former, top and bottom sides are maintained during ELO and VWB, while inverted in
the latter. From the InAs on flexible substrates, we fabricated Hall-bar devices with recess
etch-thinning,
using which electron transport properties depending on InAs layer thickness were
characterized. For the inverted VWB, we observe very high electron mobilities of
InAs
ultrathin films,
such as
∼
10
000
cm
2
/
V
s
for
∼
100
nm
thickness and
∼
7000
cm
2
/
V
s
for
∼
20
nm
. These carrier mobilities are highest not only for
thin
films on flexible substrates but also for InAs
thin films;
higher than those of InAs
films
grown on GaAs(111)A and membranes fabricated from them.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3459137</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2010-07, Vol.97 (1), p.012102-012102-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3459137 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates |
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