Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

Incorporating GaN capping layers in conjunction with recessing has been identified as a means to maximize the high frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs). Doping the cap heavily n-type is required in order to ensure minimal loss of carriers from the channel. Us...

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Veröffentlicht in:	Journal of applied physics 2010-07, Vol.108 (1)
Hauptverfasser:	Green, R. T., Luxmoore, I. J., Lee, K. B., Houston, P. A., Ranalli, F., Wang, T., Parbrook, P. J., Uren, M. J., Wallis, D. J., Martin, T.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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