Atomic profiles and electrical characteristics of very high energy (8-20 MeV) Si implants in GaAs

High-energy Si implantation into GaAs is of interest for the fabrication of fully implanted, monolithic microwave integrated circuits. Atomic concentration profiles of 8, 12, 16, and 20 MeV Si have been measured using secondary ion mass spectroscopy (SIMS). The range and shape parameters have been d...

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Veröffentlicht in:	Journal of applied physics 1990-02, Vol.67 (3), p.1262-1265
Hauptverfasser:	THOMPSON, P. E, DIETRICH, H. B, ERIDON, J. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
Online-Zugang:	Volltext
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