Stoichiometry-dependent deep levels in n-type GaAs

The photocapacitance (PHCAP) method in the constant capacitance condition has been applied to determine the energy and density of deep levels within the limits of a certain depletion layer thickness as a function of the photon energy and the applied voltage. Samples used were various n-type GaAs cry...

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Veröffentlicht in:	Journal of applied physics 1990-02, Vol.67 (4), p.1884-1896
Hauptverfasser:	NISHIZAWA, J.-I, OYAMA, Y, DEZAKI, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics
Online-Zugang:	Volltext
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