The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy
A series of InxGa1−x As films with different compositions around x=0.53 were grown on InP(001) substrates by molecular beam epitaxy. These layers were studied by double crystal x-ray diffraction and secondary electron microscopy. It was found that the broadening of a layer Bragg peak is an indicatio...
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Veröffentlicht in: | Journal of applied physics 1990-04, Vol.67 (7), p.3378-3381 |
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description | A series of InxGa1−x As films with different compositions around x=0.53 were grown on InP(001) substrates by molecular beam epitaxy. These layers were studied by double crystal x-ray diffraction and secondary electron microscopy. It was found that the broadening of a layer Bragg peak is an indication of a large scale lattice relaxation in the highly strained heterolayer. In the less strained layers the peak widths are due to sample curvature and compositional grading. The morphologies of the strained layers suggested that the sign of strain is an important factor affecting the growth kinetics on the surface. In particular, an increasing tensile strain in the epitaxial layer tends to decrease the migration rate of the species on the growing surface. |
doi_str_mv | 10.1063/1.345381 |
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fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_345381</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>19796480</sourcerecordid><originalsourceid>FETCH-LOGICAL-c255t-542a668956530acda3fafb713248f288ec67d724e62c0f6c1c4d50b3888f5bdd3</originalsourceid><addsrcrecordid>eNpFkM1LwzAYh4MoOD_APyEXYR665aNJ0-MYOgcDPcxzeZsmW6VLQtKh_e_tnODpPbzP7zk8CD1QMqNE8jmd8VxwRS_QhBJVZoUQ5BJNCGE0U2VRXqOblD4JoVTxcoLCdm-wsdboPmFvceojtA57hw8-hr3v_G7A4JrT46j7Y4QOh-iDiX1rfhdrt4JFmq_d-3S0PuFd9F8O18Mo6Iw-dhBxbeCATWh7-B7u0JWFLpn7v3uLPl6et8vXbPO2Wi8Xm0wzIfpM5AykVKWQghPQDXALti4oZ7myTCmjZdEULDeSaWKlpjpvBKm5UsqKumn4LZqevTr6lKKxVYjtAeJQUVKdSlW0Opca0cczGiBp6GwEp9v0z4_VZK4I_wFr_Wgw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy</title><source>AIP Digital Archive</source><creator>SALOKATVE, A ; HOVINEN, M</creator><creatorcontrib>SALOKATVE, A ; HOVINEN, M</creatorcontrib><description>A series of InxGa1−x As films with different compositions around x=0.53 were grown on InP(001) substrates by molecular beam epitaxy. These layers were studied by double crystal x-ray diffraction and secondary electron microscopy. It was found that the broadening of a layer Bragg peak is an indication of a large scale lattice relaxation in the highly strained heterolayer. In the less strained layers the peak widths are due to sample curvature and compositional grading. The morphologies of the strained layers suggested that the sign of strain is an important factor affecting the growth kinetics on the surface. In particular, an increasing tensile strain in the epitaxial layer tends to decrease the migration rate of the species on the growing surface.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.345381</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physical properties of thin films, nonelectronic ; Physics ; Solid surfaces and solid-solid interfaces ; Surface energy; thermodynamic properties ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Journal of applied physics, 1990-04, Vol.67 (7), p.3378-3381</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c255t-542a668956530acda3fafb713248f288ec67d724e62c0f6c1c4d50b3888f5bdd3</citedby><cites>FETCH-LOGICAL-c255t-542a668956530acda3fafb713248f288ec67d724e62c0f6c1c4d50b3888f5bdd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19796480$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SALOKATVE, A</creatorcontrib><creatorcontrib>HOVINEN, M</creatorcontrib><title>The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy</title><title>Journal of applied physics</title><description>A series of InxGa1−x As films with different compositions around x=0.53 were grown on InP(001) substrates by molecular beam epitaxy. These layers were studied by double crystal x-ray diffraction and secondary electron microscopy. It was found that the broadening of a layer Bragg peak is an indication of a large scale lattice relaxation in the highly strained heterolayer. In the less strained layers the peak widths are due to sample curvature and compositional grading. The morphologies of the strained layers suggested that the sign of strain is an important factor affecting the growth kinetics on the surface. In particular, an increasing tensile strain in the epitaxial layer tends to decrease the migration rate of the species on the growing surface.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physical properties of thin films, nonelectronic</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface energy; thermodynamic properties</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNpFkM1LwzAYh4MoOD_APyEXYR665aNJ0-MYOgcDPcxzeZsmW6VLQtKh_e_tnODpPbzP7zk8CD1QMqNE8jmd8VxwRS_QhBJVZoUQ5BJNCGE0U2VRXqOblD4JoVTxcoLCdm-wsdboPmFvceojtA57hw8-hr3v_G7A4JrT46j7Y4QOh-iDiX1rfhdrt4JFmq_d-3S0PuFd9F8O18Mo6Iw-dhBxbeCATWh7-B7u0JWFLpn7v3uLPl6et8vXbPO2Wi8Xm0wzIfpM5AykVKWQghPQDXALti4oZ7myTCmjZdEULDeSaWKlpjpvBKm5UsqKumn4LZqevTr6lKKxVYjtAeJQUVKdSlW0Opca0cczGiBp6GwEp9v0z4_VZK4I_wFr_Wgw</recordid><startdate>19900401</startdate><enddate>19900401</enddate><creator>SALOKATVE, A</creator><creator>HOVINEN, M</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19900401</creationdate><title>The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy</title><author>SALOKATVE, A ; HOVINEN, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c255t-542a668956530acda3fafb713248f288ec67d724e62c0f6c1c4d50b3888f5bdd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physical properties of thin films, nonelectronic</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface energy; thermodynamic properties</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SALOKATVE, A</creatorcontrib><creatorcontrib>HOVINEN, M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SALOKATVE, A</au><au>HOVINEN, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy</atitle><jtitle>Journal of applied physics</jtitle><date>1990-04-01</date><risdate>1990</risdate><volume>67</volume><issue>7</issue><spage>3378</spage><epage>3381</epage><pages>3378-3381</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>A series of InxGa1−x As films with different compositions around x=0.53 were grown on InP(001) substrates by molecular beam epitaxy. These layers were studied by double crystal x-ray diffraction and secondary electron microscopy. It was found that the broadening of a layer Bragg peak is an indication of a large scale lattice relaxation in the highly strained heterolayer. In the less strained layers the peak widths are due to sample curvature and compositional grading. The morphologies of the strained layers suggested that the sign of strain is an important factor affecting the growth kinetics on the surface. In particular, an increasing tensile strain in the epitaxial layer tends to decrease the migration rate of the species on the growing surface.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.345381</doi><tpages>4</tpages></addata></record> |
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subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physical properties of thin films, nonelectronic Physics Solid surfaces and solid-solid interfaces Surface energy thermodynamic properties Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
title | The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T11%3A00%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20effects%20of%20strain%20on%20morphology%20and%20structural%20properties%20of%20InGaAs/InP(001)%20grown%20by%20molecular%20beam%20epitaxy&rft.jtitle=Journal%20of%20applied%20physics&rft.au=SALOKATVE,%20A&rft.date=1990-04-01&rft.volume=67&rft.issue=7&rft.spage=3378&rft.epage=3381&rft.pages=3378-3381&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.345381&rft_dat=%3Cpascalfrancis_cross%3E19796480%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |