Evaluation of crystalline quality of heteroepitaxial yttria-stabilized zirconia films on silicon by means of ion beam channeling

Yttria-stabilized zirconia (YSZ) films have been deposited by vacuum evaporation on Si(100) substrates heated at 800 °C. Rutherford backscattering spectra of the YSZ films show that they are epitaxially grown on the Si(100) substrate, which is consistent with x-ray diffraction and reflection high-en...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1989-07, Vol.66 (2), p.616-618
Hauptverfasser:	FUKUMOTO, H, IMURA, T, OSAKA, Y, NISHIYAMA, F
Format:	Artikel
Sprache:	eng
Schlagworte:	360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies CHALCOGENIDES CHANNELING COATINGS COHERENT SCATTERING Condensed matter: structure, mechanical and thermal properties CRYSTAL DEFECTS CRYSTAL STRUCTURE DIFFRACTION ELECTRON DIFFRACTION ELEMENTS EPITAXY Exact sciences and technology ION CHANNELING MATERIALS SCIENCE OXIDES OXYGEN COMPOUNDS Physics SCATTERING SEMIMETALS SILICON Solid surfaces and solid-solid interfaces SUBSTRATES Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology TRANSITION ELEMENT COMPOUNDS VAPOR DEPOSITED COATINGS X-RAY DIFFRACTION YTTRIUM COMPOUNDS YTTRIUM OXIDES ZIRCONIUM COMPOUNDS ZIRCONIUM OXIDES
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