Electrical properties of B-ion-implanted Si layer preamorphized by Ge ions

B+-implanted Si layers preamorphized with 100-keV Ge+ implantation have been evaluated using Rutherford backscattering spectrometry and the van der Pauw technique. We suggest that the lower structural recovery, 98% of Si occupies substitutional sites, arises from the difference in tetrahedral covale...

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Veröffentlicht in:	Journal of applied physics 1989-08, Vol.66 (4), p.1876-1878
Hauptverfasser:	KURIYAMA, K, AOKI, S, SATOH, M, KUREBAYASHI, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Galvanomagnetic and other magnetotransport effects Physics
Online-Zugang:	Volltext
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