The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon

The retardation phenomenon of oxygen precipitation in Czochralski silicon has been studied simultaneously with the growth of surface stacking faults under a silicon nitride capping layer. The surface faults were intentionally introduced to monitor the bulk self-interstitial supersaturation in the cr...

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Veröffentlicht in:	Journal of applied physics 1989-06, Vol.65 (11), p.4215-4219
Hauptverfasser:	ROGERS, W. B, MASSOUD, H. Z, FAIR, R. B, GÖSELE, U. M, TAN, T. Y, ROZGONYI, G. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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