Characterization of deep-level defects in In1− x Ga x As/InP
New characterization data are presented for the deep-level defects observed in photoluminescence (PL) spectra of InGaAs near 0.1 eV within the band gap. The literature regarding these defects is summarized and compared to the results of this study. Defects are seen to be present in In-rich, Ga-rich,...
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| Veröffentlicht in: | Journal of applied physics 1988-07, Vol.64 (2), p.708-712 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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