Transport properties of hexagonal and tetragonal MoSi2 thin films
The electrical resistivity and the Hall coefficient of thin polycrystalline MoSi2 films were measured as a function of temperature from 4.2 to 300 K. The transverse and longitudinal magnetoresistances have been determined at temperatures between 2 and 50 K at fields up to 10 T. Samples of both the h...
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| Veröffentlicht in: | Journal of applied physics 1988-07, Vol.64 (2), p.749-752 |
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| container_title | Journal of applied physics |
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| creator | DE VRIES, J. W. C VAN OMMEN, A. H |
| description | The electrical resistivity and the Hall coefficient of thin polycrystalline MoSi2 films were measured as a function of temperature from 4.2 to 300 K. The transverse and longitudinal magnetoresistances have been determined at temperatures between 2 and 50 K at fields up to 10 T. Samples of both the high-temperature tetragonal MoSi2 phase and the low-temperature hexagonal phase have been prepared. The Hall coefficient of tetragonal MoSi2 changes sign with temperature, which means that this compound is a multiband conductor, and thus no reliable value for the carrier concentration can be derived from Hall measurements alone. Magnetoresistance data have therefore been analyzed with a simple two-band model in order to determine the dominant carrier type in both MoSi2 structures. In tetragonal MoSi2, electrons and holes are present in equal concentrations, whereas in hexagonal MoSi2 holes are the dominating type of carrier. |
| doi_str_mv | 10.1063/1.341918 |
| format | Article |
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W. C ; VAN OMMEN, A. H</creator><creatorcontrib>DE VRIES, J. W. C ; VAN OMMEN, A. H</creatorcontrib><description>The electrical resistivity and the Hall coefficient of thin polycrystalline MoSi2 films were measured as a function of temperature from 4.2 to 300 K. The transverse and longitudinal magnetoresistances have been determined at temperatures between 2 and 50 K at fields up to 10 T. Samples of both the high-temperature tetragonal MoSi2 phase and the low-temperature hexagonal phase have been prepared. The Hall coefficient of tetragonal MoSi2 changes sign with temperature, which means that this compound is a multiband conductor, and thus no reliable value for the carrier concentration can be derived from Hall measurements alone. Magnetoresistance data have therefore been analyzed with a simple two-band model in order to determine the dominant carrier type in both MoSi2 structures. In tetragonal MoSi2, electrons and holes are present in equal concentrations, whereas in hexagonal MoSi2 holes are the dominating type of carrier.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.341918</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Physics</subject><ispartof>Journal of applied physics, 1988-07, Vol.64 (2), p.749-752</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c254t-5e76581caa0b908471896d5b37ae1bcd5543a0651dcadec4a6d3b21bb008e0a33</citedby><cites>FETCH-LOGICAL-c254t-5e76581caa0b908471896d5b37ae1bcd5543a0651dcadec4a6d3b21bb008e0a33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7234358$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>DE VRIES, J. W. C</creatorcontrib><creatorcontrib>VAN OMMEN, A. H</creatorcontrib><title>Transport properties of hexagonal and tetragonal MoSi2 thin films</title><title>Journal of applied physics</title><description>The electrical resistivity and the Hall coefficient of thin polycrystalline MoSi2 films were measured as a function of temperature from 4.2 to 300 K. The transverse and longitudinal magnetoresistances have been determined at temperatures between 2 and 50 K at fields up to 10 T. Samples of both the high-temperature tetragonal MoSi2 phase and the low-temperature hexagonal phase have been prepared. The Hall coefficient of tetragonal MoSi2 changes sign with temperature, which means that this compound is a multiband conductor, and thus no reliable value for the carrier concentration can be derived from Hall measurements alone. Magnetoresistance data have therefore been analyzed with a simple two-band model in order to determine the dominant carrier type in both MoSi2 structures. 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W. C</creator><creator>VAN OMMEN, A. H</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19880715</creationdate><title>Transport properties of hexagonal and tetragonal MoSi2 thin films</title><author>DE VRIES, J. W. C ; VAN OMMEN, A. H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c254t-5e76581caa0b908471896d5b37ae1bcd5543a0651dcadec4a6d3b21bb008e0a33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DE VRIES, J. W. C</creatorcontrib><creatorcontrib>VAN OMMEN, A. H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DE VRIES, J. W. C</au><au>VAN OMMEN, A. H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transport properties of hexagonal and tetragonal MoSi2 thin films</atitle><jtitle>Journal of applied physics</jtitle><date>1988-07-15</date><risdate>1988</risdate><volume>64</volume><issue>2</issue><spage>749</spage><epage>752</epage><pages>749-752</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The electrical resistivity and the Hall coefficient of thin polycrystalline MoSi2 films were measured as a function of temperature from 4.2 to 300 K. The transverse and longitudinal magnetoresistances have been determined at temperatures between 2 and 50 K at fields up to 10 T. Samples of both the high-temperature tetragonal MoSi2 phase and the low-temperature hexagonal phase have been prepared. The Hall coefficient of tetragonal MoSi2 changes sign with temperature, which means that this compound is a multiband conductor, and thus no reliable value for the carrier concentration can be derived from Hall measurements alone. Magnetoresistance data have therefore been analyzed with a simple two-band model in order to determine the dominant carrier type in both MoSi2 structures. In tetragonal MoSi2, electrons and holes are present in equal concentrations, whereas in hexagonal MoSi2 holes are the dominating type of carrier.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.341918</doi><tpages>4</tpages></addata></record> |
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| ispartof | Journal of applied physics, 1988-07, Vol.64 (2), p.749-752 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_341918 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Physics |
| title | Transport properties of hexagonal and tetragonal MoSi2 thin films |
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