Electrical properties of CdS/CdTe heterojunctions

The electrical properties of n-CdS/p-CdTe heterojunctions depend strongly on the cleanliness of the interface region. In this work, CdTe films were deposited on CdS/glass substrates by close-spaced sublimation (CSS) under various conditions. The dark current-voltage characteristics of the resulting...

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Veröffentlicht in:J. Appl. Phys.; (United States) 1988-08, Vol.64 (3), p.1233-1237
Hauptverfasser: CHU, T. L, CHU, S. S, ANG, S. T
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CHU, S. S
ANG, S. T
description The electrical properties of n-CdS/p-CdTe heterojunctions depend strongly on the cleanliness of the interface region. In this work, CdTe films were deposited on CdS/glass substrates by close-spaced sublimation (CSS) under various conditions. The dark current-voltage characteristics of the resulting heterojunctions were measured over a wide temperature range, and the capacitance-voltage characteristics were measured in the dark and under illumination. When the CdS surface is in situ cleaned prior to the deposition of the CdTe film, the current transport across the junction is controlled by a thermally activated process. Tunneling makes an important contribution to the interface recombination at temperatures below room temperature when the in situ cleaning of CdS is not used. The dark capacitance of CdS/CdTe heterojunctions prepared with in situ etching is essentially independent of the reverse bias due to intrinsic interface states. Under white light illumination, the 1/C 2 vs V relation is nearly linear. The CdS/CdTe heterojunctions without in situ cleaning showed different 1/C 2 vs V relations due to higher density of interface states. The in situ cleaning also has pronounced effects on the frequency dependence of dark and illuminated capacitances. Using the in situ cleaning technique, solar cells of about 1 cm2 area have achieved an AM 1.5 (global) efficiency of about 10.5%.
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The dark capacitance of CdS/CdTe heterojunctions prepared with in situ etching is essentially independent of the reverse bias due to intrinsic interface states. Under white light illumination, the 1/C 2 vs V relation is nearly linear. The CdS/CdTe heterojunctions without in situ cleaning showed different 1/C 2 vs V relations due to higher density of interface states. The in situ cleaning also has pronounced effects on the frequency dependence of dark and illuminated capacitances. 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T</creatorcontrib><creatorcontrib>Southern Methodist University, Dallas, Texas 75275</creatorcontrib><title>Electrical properties of CdS/CdTe heterojunctions</title><title>J. Appl. Phys.; (United States)</title><description>The electrical properties of n-CdS/p-CdTe heterojunctions depend strongly on the cleanliness of the interface region. In this work, CdTe films were deposited on CdS/glass substrates by close-spaced sublimation (CSS) under various conditions. The dark current-voltage characteristics of the resulting heterojunctions were measured over a wide temperature range, and the capacitance-voltage characteristics were measured in the dark and under illumination. When the CdS surface is in situ cleaned prior to the deposition of the CdTe film, the current transport across the junction is controlled by a thermally activated process. Tunneling makes an important contribution to the interface recombination at temperatures below room temperature when the in situ cleaning of CdS is not used. The dark capacitance of CdS/CdTe heterojunctions prepared with in situ etching is essentially independent of the reverse bias due to intrinsic interface states. Under white light illumination, the 1/C 2 vs V relation is nearly linear. The CdS/CdTe heterojunctions without in situ cleaning showed different 1/C 2 vs V relations due to higher density of interface states. The in situ cleaning also has pronounced effects on the frequency dependence of dark and illuminated capacitances. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>SEMICONDUCTOR JUNCTIONS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SOLAR CELLS</topic><topic>SOLAR EQUIPMENT</topic><topic>SULFIDES</topic><topic>SULFUR COMPOUNDS</topic><topic>SURFACE COATING</topic><topic>TELLURIDES</topic><topic>TELLURIUM COMPOUNDS</topic><topic>TEMPERATURE DEPENDENCE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CHU, T. L</creatorcontrib><creatorcontrib>CHU, S. S</creatorcontrib><creatorcontrib>ANG, S. T</creatorcontrib><creatorcontrib>Southern Methodist University, Dallas, Texas 75275</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Phys.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CHU, T. L</au><au>CHU, S. S</au><au>ANG, S. T</au><aucorp>Southern Methodist University, Dallas, Texas 75275</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical properties of CdS/CdTe heterojunctions</atitle><jtitle>J. Appl. Phys.; (United States)</jtitle><date>1988-08-01</date><risdate>1988</risdate><volume>64</volume><issue>3</issue><spage>1233</spage><epage>1237</epage><pages>1233-1237</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The electrical properties of n-CdS/p-CdTe heterojunctions depend strongly on the cleanliness of the interface region. In this work, CdTe films were deposited on CdS/glass substrates by close-spaced sublimation (CSS) under various conditions. The dark current-voltage characteristics of the resulting heterojunctions were measured over a wide temperature range, and the capacitance-voltage characteristics were measured in the dark and under illumination. When the CdS surface is in situ cleaned prior to the deposition of the CdTe film, the current transport across the junction is controlled by a thermally activated process. Tunneling makes an important contribution to the interface recombination at temperatures below room temperature when the in situ cleaning of CdS is not used. The dark capacitance of CdS/CdTe heterojunctions prepared with in situ etching is essentially independent of the reverse bias due to intrinsic interface states. Under white light illumination, the 1/C 2 vs V relation is nearly linear. The CdS/CdTe heterojunctions without in situ cleaning showed different 1/C 2 vs V relations due to higher density of interface states. The in situ cleaning also has pronounced effects on the frequency dependence of dark and illuminated capacitances. Using the in situ cleaning technique, solar cells of about 1 cm2 area have achieved an AM 1.5 (global) efficiency of about 10.5%.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.341840</doi><tpages>5</tpages></addata></record>
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subjects 360603 - Materials- Properties
Applied sciences
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CADMIUM TELLURIDES
CAPACITANCE
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
Electronics
Exact sciences and technology
FABRICATION
HETEROJUNCTIONS
INORGANIC PHOSPHORS
Interfaces
JUNCTIONS
MATERIALS
MATERIALS SCIENCE
MEDIUM TEMPERATURE
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
title Electrical properties of CdS/CdTe heterojunctions
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