Copper-catalyzed etching of silicon by F2: kinetics and feature morphology

The copper-catalyzed fluorination of silicon is first order in [F2] and in [Cu]s until the coverage reaches ∼4 monolayers. Above ∼4 monolayers the reaction rate is zero order in copper, suggesting a limited number of catalytically active Cu/Si sites. Copper islands form at high coverages, above satu...

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Veröffentlicht in:	Journal of applied physics 1988-08, Vol.64 (3), p.1494-1498
Hauptverfasser:	NUR SELAMOGLU, MUCHA, J. A, FLAMM, D. L, IBBOTSON, D. E
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid-fluid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
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