Characterization of ion damage on p-type cadmium telluride surfaces
The effects of low-energy Ar ions (0–800 eV), from an ion beam and in an rf sputtering unit on the surface of single-crystal p-type CdTe have been investigated as a function of the ion energy using measurements of current versus voltage, spectral response, and capacitance versus voltage for indium j...
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Veröffentlicht in: | J. Appl. Phys.; (United States) 1988-09, Vol.64 (5), p.2792-2794 |
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creator | CHIEN, K.-F FAHRENBRUCH, A. L BUBE, R. H |
description | The effects of low-energy Ar ions (0–800 eV), from an ion beam and in an rf sputtering unit on the surface of single-crystal p-type CdTe have been investigated as a function of the ion energy using measurements of current versus voltage, spectral response, and capacitance versus voltage for indium junctions on CdTe. A threshold for the effects has been identified at an accelerating voltage of slightly less than 100 V for a fluence of 5×10−3C cm−2. Bombardment by Ar ions at voltages larger than this results in formation of an n-type surface layer on the p-type CdTe crystals. |
doi_str_mv | 10.1063/1.341581 |
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fullrecord | <record><control><sourceid>pascalfrancis_osti_</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_341581</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>6880886</sourcerecordid><originalsourceid>FETCH-LOGICAL-c281t-67acc0c62bc66c21e9518d060211798eabc43d3ceb00ee85de5ffc23cca2d6d73</originalsourceid><addsrcrecordid>eNo90E1LxDAQBuAgCq6r4E8o4sFL10zTpulRil-w4EXPZXYydSP9Iske1l9vpeLpncPDy_AKcQ1yA1Kre9ioHAoDJ2IF0lRpWRTyVKykzCA1VVmdi4sQvqQEMKpaibreo0eK7N03RjcOydgmv2Gxx09O5mtK43HihND27tAnkbvu4J3lJBx8i8ThUpy12AW--su1-Hh6fK9f0u3b82v9sE0pMxBTXSKRJJ3tSGvKgKsCjJV6_gzKyjDuKFdWEe-kZDaF5aJtKVNEmFltS7UWN0vvGKJrArnItKdxGJhio6tM52U-o7sFkR9D8Nw2k3c9-mMDsvldqIFmWWimtwudMBB2rceBXPj32hhpjFY_UNdk6w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Characterization of ion damage on p-type cadmium telluride surfaces</title><source>AIP Digital Archive</source><creator>CHIEN, K.-F ; FAHRENBRUCH, A. L ; BUBE, R. H</creator><creatorcontrib>CHIEN, K.-F ; FAHRENBRUCH, A. L ; BUBE, R. H ; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305</creatorcontrib><description>The effects of low-energy Ar ions (0–800 eV), from an ion beam and in an rf sputtering unit on the surface of single-crystal p-type CdTe have been investigated as a function of the ion energy using measurements of current versus voltage, spectral response, and capacitance versus voltage for indium junctions on CdTe. A threshold for the effects has been identified at an accelerating voltage of slightly less than 100 V for a fluence of 5×10−3C cm−2. Bombardment by Ar ions at voltages larger than this results in formation of an n-type surface layer on the p-type CdTe crystals.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.341581</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>ARGON IONS ; CADMIUM COMPOUNDS ; CADMIUM TELLURIDES ; CHALCOGENIDES ; CHARGED PARTICLES ; COLLISIONS ; Condensed matter: structure, mechanical and thermal properties ; ELECTRIC CONDUCTIVITY ; ELECTRICAL PROPERTIES ; Exact sciences and technology ; ION COLLISIONS ; Ion radiation effects ; IONS ; MATERIALS SCIENCE ; PHOTOCONDUCTIVITY ; PHYSICAL PROPERTIES ; PHYSICAL RADIATION EFFECTS ; Physical radiation effects, radiation damage ; Physics ; RADIATION EFFECTS ; SPUTTERING ; Structure of solids and liquids; crystallography ; TELLURIDES ; TELLURIUM COMPOUNDS 360605 -- Materials-- Radiation Effects</subject><ispartof>J. Appl. Phys.; (United States), 1988-09, Vol.64 (5), p.2792-2794</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c281t-67acc0c62bc66c21e9518d060211798eabc43d3ceb00ee85de5ffc23cca2d6d73</citedby><cites>FETCH-LOGICAL-c281t-67acc0c62bc66c21e9518d060211798eabc43d3ceb00ee85de5ffc23cca2d6d73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,882,27905,27906</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6880886$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/6926474$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>CHIEN, K.-F</creatorcontrib><creatorcontrib>FAHRENBRUCH, A. L</creatorcontrib><creatorcontrib>BUBE, R. H</creatorcontrib><creatorcontrib>Department of Materials Science and Engineering, Stanford University, Stanford, California 94305</creatorcontrib><title>Characterization of ion damage on p-type cadmium telluride surfaces</title><title>J. Appl. Phys.; (United States)</title><description>The effects of low-energy Ar ions (0–800 eV), from an ion beam and in an rf sputtering unit on the surface of single-crystal p-type CdTe have been investigated as a function of the ion energy using measurements of current versus voltage, spectral response, and capacitance versus voltage for indium junctions on CdTe. A threshold for the effects has been identified at an accelerating voltage of slightly less than 100 V for a fluence of 5×10−3C cm−2. Bombardment by Ar ions at voltages larger than this results in formation of an n-type surface layer on the p-type CdTe crystals.</description><subject>ARGON IONS</subject><subject>CADMIUM COMPOUNDS</subject><subject>CADMIUM TELLURIDES</subject><subject>CHALCOGENIDES</subject><subject>CHARGED PARTICLES</subject><subject>COLLISIONS</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRICAL PROPERTIES</subject><subject>Exact sciences and technology</subject><subject>ION COLLISIONS</subject><subject>Ion radiation effects</subject><subject>IONS</subject><subject>MATERIALS SCIENCE</subject><subject>PHOTOCONDUCTIVITY</subject><subject>PHYSICAL PROPERTIES</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>Physical radiation effects, radiation damage</subject><subject>Physics</subject><subject>RADIATION EFFECTS</subject><subject>SPUTTERING</subject><subject>Structure of solids and liquids; crystallography</subject><subject>TELLURIDES</subject><subject>TELLURIUM COMPOUNDS 360605 -- Materials-- Radiation Effects</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo90E1LxDAQBuAgCq6r4E8o4sFL10zTpulRil-w4EXPZXYydSP9Iske1l9vpeLpncPDy_AKcQ1yA1Kre9ioHAoDJ2IF0lRpWRTyVKykzCA1VVmdi4sQvqQEMKpaibreo0eK7N03RjcOydgmv2Gxx09O5mtK43HihND27tAnkbvu4J3lJBx8i8ThUpy12AW--su1-Hh6fK9f0u3b82v9sE0pMxBTXSKRJJ3tSGvKgKsCjJV6_gzKyjDuKFdWEe-kZDaF5aJtKVNEmFltS7UWN0vvGKJrArnItKdxGJhio6tM52U-o7sFkR9D8Nw2k3c9-mMDsvldqIFmWWimtwudMBB2rceBXPj32hhpjFY_UNdk6w</recordid><startdate>19880901</startdate><enddate>19880901</enddate><creator>CHIEN, K.-F</creator><creator>FAHRENBRUCH, A. L</creator><creator>BUBE, R. H</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19880901</creationdate><title>Characterization of ion damage on p-type cadmium telluride surfaces</title><author>CHIEN, K.-F ; FAHRENBRUCH, A. L ; BUBE, R. H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c281t-67acc0c62bc66c21e9518d060211798eabc43d3ceb00ee85de5ffc23cca2d6d73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>ARGON IONS</topic><topic>CADMIUM COMPOUNDS</topic><topic>CADMIUM TELLURIDES</topic><topic>CHALCOGENIDES</topic><topic>CHARGED PARTICLES</topic><topic>COLLISIONS</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRICAL PROPERTIES</topic><topic>Exact sciences and technology</topic><topic>ION COLLISIONS</topic><topic>Ion radiation effects</topic><topic>IONS</topic><topic>MATERIALS SCIENCE</topic><topic>PHOTOCONDUCTIVITY</topic><topic>PHYSICAL PROPERTIES</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>Physical radiation effects, radiation damage</topic><topic>Physics</topic><topic>RADIATION EFFECTS</topic><topic>SPUTTERING</topic><topic>Structure of solids and liquids; crystallography</topic><topic>TELLURIDES</topic><topic>TELLURIUM COMPOUNDS 360605 -- Materials-- Radiation Effects</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CHIEN, K.-F</creatorcontrib><creatorcontrib>FAHRENBRUCH, A. L</creatorcontrib><creatorcontrib>BUBE, R. H</creatorcontrib><creatorcontrib>Department of Materials Science and Engineering, Stanford University, Stanford, California 94305</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Phys.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CHIEN, K.-F</au><au>FAHRENBRUCH, A. L</au><au>BUBE, R. H</au><aucorp>Department of Materials Science and Engineering, Stanford University, Stanford, California 94305</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of ion damage on p-type cadmium telluride surfaces</atitle><jtitle>J. Appl. Phys.; (United States)</jtitle><date>1988-09-01</date><risdate>1988</risdate><volume>64</volume><issue>5</issue><spage>2792</spage><epage>2794</epage><pages>2792-2794</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The effects of low-energy Ar ions (0–800 eV), from an ion beam and in an rf sputtering unit on the surface of single-crystal p-type CdTe have been investigated as a function of the ion energy using measurements of current versus voltage, spectral response, and capacitance versus voltage for indium junctions on CdTe. A threshold for the effects has been identified at an accelerating voltage of slightly less than 100 V for a fluence of 5×10−3C cm−2. Bombardment by Ar ions at voltages larger than this results in formation of an n-type surface layer on the p-type CdTe crystals.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.341581</doi><tpages>3</tpages></addata></record> |
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subjects | ARGON IONS CADMIUM COMPOUNDS CADMIUM TELLURIDES CHALCOGENIDES CHARGED PARTICLES COLLISIONS Condensed matter: structure, mechanical and thermal properties ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES Exact sciences and technology ION COLLISIONS Ion radiation effects IONS MATERIALS SCIENCE PHOTOCONDUCTIVITY PHYSICAL PROPERTIES PHYSICAL RADIATION EFFECTS Physical radiation effects, radiation damage Physics RADIATION EFFECTS SPUTTERING Structure of solids and liquids crystallography TELLURIDES TELLURIUM COMPOUNDS 360605 -- Materials-- Radiation Effects |
title | Characterization of ion damage on p-type cadmium telluride surfaces |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T10%3A21%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Characterization%20of%20ion%20damage%20on%20p-type%20cadmium%20telluride%20surfaces&rft.jtitle=J.%20Appl.%20Phys.;%20(United%20States)&rft.au=CHIEN,%20K.-F&rft.aucorp=Department%20of%20Materials%20Science%20and%20Engineering,%20Stanford%20University,%20Stanford,%20California%2094305&rft.date=1988-09-01&rft.volume=64&rft.issue=5&rft.spage=2792&rft.epage=2794&rft.pages=2792-2794&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.341581&rft_dat=%3Cpascalfrancis_osti_%3E6880886%3C/pascalfrancis_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |