Characterization of ion damage on p-type cadmium telluride surfaces

The effects of low-energy Ar ions (0–800 eV), from an ion beam and in an rf sputtering unit on the surface of single-crystal p-type CdTe have been investigated as a function of the ion energy using measurements of current versus voltage, spectral response, and capacitance versus voltage for indium j...

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Veröffentlicht in:J. Appl. Phys.; (United States) 1988-09, Vol.64 (5), p.2792-2794
Hauptverfasser: CHIEN, K.-F, FAHRENBRUCH, A. L, BUBE, R. H
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FAHRENBRUCH, A. L
BUBE, R. H
description The effects of low-energy Ar ions (0–800 eV), from an ion beam and in an rf sputtering unit on the surface of single-crystal p-type CdTe have been investigated as a function of the ion energy using measurements of current versus voltage, spectral response, and capacitance versus voltage for indium junctions on CdTe. A threshold for the effects has been identified at an accelerating voltage of slightly less than 100 V for a fluence of 5×10−3C cm−2. Bombardment by Ar ions at voltages larger than this results in formation of an n-type surface layer on the p-type CdTe crystals.
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Phys.; (United States)</jtitle><date>1988-09-01</date><risdate>1988</risdate><volume>64</volume><issue>5</issue><spage>2792</spage><epage>2794</epage><pages>2792-2794</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The effects of low-energy Ar ions (0–800 eV), from an ion beam and in an rf sputtering unit on the surface of single-crystal p-type CdTe have been investigated as a function of the ion energy using measurements of current versus voltage, spectral response, and capacitance versus voltage for indium junctions on CdTe. A threshold for the effects has been identified at an accelerating voltage of slightly less than 100 V for a fluence of 5×10−3C cm−2. Bombardment by Ar ions at voltages larger than this results in formation of an n-type surface layer on the p-type CdTe crystals.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.341581</doi><tpages>3</tpages></addata></record>
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identifier ISSN: 0021-8979
ispartof J. Appl. Phys.; (United States), 1988-09, Vol.64 (5), p.2792-2794
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1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_341581
source AIP Digital Archive
subjects ARGON IONS
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHARGED PARTICLES
COLLISIONS
Condensed matter: structure, mechanical and thermal properties
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
Exact sciences and technology
ION COLLISIONS
Ion radiation effects
IONS
MATERIALS SCIENCE
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
Physical radiation effects, radiation damage
Physics
RADIATION EFFECTS
SPUTTERING
Structure of solids and liquids
crystallography
TELLURIDES
TELLURIUM COMPOUNDS 360605 -- Materials-- Radiation Effects
title Characterization of ion damage on p-type cadmium telluride surfaces
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