Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot

Results of first-principles full potential calculations of absolute position of valence and conduction energy bands as a function of (001) biaxial strain are reported for group IIIA–VA (InAs, GaAs, InP) and group IIB–VIA (CdTe, ZnTe) semiconductors. Our computational procedure is based on the Kohn–S...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2010-05, Vol.107 (10)
Hauptverfasser:	Kadantsev, Eugene S., Zielinski, Michal, Korkusinski, Marek, Hawrylak, Pawel
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!