Stresses in sputtered Ti-Si multilayers and polycrystalline silicide films
Titanium silicon multilayers have been produced by alternating sputter deposition. The stress in the as-deposited layers is a function of the period of the multilayer structure. The multilayers were subsequently annealed to form silicide films. From stress and strain measurements on these films Pois...
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| Veröffentlicht in: | Journal of applied physics 1988-05, Vol.63 (10), p.4979-4982 |
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| container_end_page | 4982 |
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| container_issue | 10 |
| container_start_page | 4979 |
| container_title | Journal of applied physics |
| container_volume | 63 |
| creator | WESSELS, P. J. J JONGSTE, J. F JANSSEN, G. C. A. M MULDER, A. L RADELAAR, S LOOPSTRA, O. B |
| description | Titanium silicon multilayers have been produced by alternating sputter deposition. The stress in the as-deposited layers is a function of the period of the multilayer structure. The multilayers were subsequently annealed to form silicide films. From stress and strain measurements on these films Poisson’s ratio is determined. After annealing, the films exhibit a tensile stress which can be attributed to the difference in thermal expansion coefficient between substrate and silicide film. |
| doi_str_mv | 10.1063/1.340443 |
| format | Article |
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The multilayers were subsequently annealed to form silicide films. From stress and strain measurements on these films Poisson’s ratio is determined. After annealing, the films exhibit a tensile stress which can be attributed to the difference in thermal expansion coefficient between substrate and silicide film.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.340443</doi><tpages>4</tpages></addata></record> |
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| ispartof | Journal of applied physics, 1988-05, Vol.63 (10), p.4979-4982 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_340443 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Stresses in sputtered Ti-Si multilayers and polycrystalline silicide films |
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