Ellipsometric and Rutherford backscattering characterization of low-energy hydrogen-, helium-, neon-, and argon-bombarded silicon
Ellipsometry and Rutherford backscattering/channeling were used to study silicon surfaces modified by low-energy hydrogen, helium, neon, and argon ion bombardment. Ellipsometry was found to be a very sensitive technique for characterization of these samples, able in some cases to simultaneously dist...
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| Veröffentlicht in: | J. Appl. Phys.; (United States) 1988-06, Vol.63 (11), p.5288-5294 |
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| container_title | J. Appl. Phys.; (United States) |
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| creator | BUCKNER, J. L VITKAVAGE, D. J IRENE, E. A |
| description | Ellipsometry and Rutherford backscattering/channeling were used to study silicon surfaces modified by low-energy hydrogen, helium, neon, and argon ion bombardment. Ellipsometry was found to be a very sensitive technique for characterization of these samples, able in some cases to simultaneously distinguish the ion identity, incident energy, and total dose experienced by the material. A comparison of the ellipsometric results for the different cases indicates qualitative differences in the physical modifications induced in the silicon surface region under bombardment by different ions. Comparison of the ellipsometric results with Rutherford backscattering/channeling data yielded estimates of the complex refractive index of the silicon layer modified by hydrogen and helium bombardment, showing a general decrease in the refractive index and an increase in the optical extinction coefficient upon bombardment. It was possible to explain these changes, at least qualitatively, by using the Bruggeman effective medium approximation to estimate the volume composition of this layer subject to certain simplifying assumptions. One result of this was the development of the exact solution for the three-component Bruggeman analysis; these equations are derived in the Appendix. |
| doi_str_mv | 10.1063/1.340392 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_osti_</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_340392</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>7169254</sourcerecordid><originalsourceid>FETCH-LOGICAL-c262t-8d270caa1168a125e5b074484c8796af80ea3fd4b2d0f5360102c3452521d0303</originalsourceid><addsrcrecordid>eNo9kEtLAzEUhYMoWKvgTwjiwoVTb5J5LqXUBxQE0fVwJ8nMRKdJSVKk7vznzlBxdc-Bj3PhI-SSwYJBLu7YQqQgKn5EZgzKKimyDI7JDICzpKyK6pSchfABwFgpqhn5WQ2D2Qa30dEbSdEq-rqLvfat84o2KD-DxBi1N7ajskePcirfGI2z1LV0cF-Jttp3e9rvlXedtskt7fVgdpsxWO2mPu2i78bcuE2DXmlFgxmMdPacnLQ4BH3xd-fk_WH1tnxK1i-Pz8v7dSJ5zmNSKl6ARGQsL5HxTGcNFGlaprIsqhzbEjSKVqUNV9BmIgcGXIo04xlnCgSIObk67LoQTR2kiVr243-rZaxHTEA-QTcHSHoXgtdtvfVmg35fM6gnvzWrD35H9PqAbnFUNLQerTThny9YXvEsFb8Nwnn7</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Ellipsometric and Rutherford backscattering characterization of low-energy hydrogen-, helium-, neon-, and argon-bombarded silicon</title><source>AIP Digital Archive</source><creator>BUCKNER, J. L ; VITKAVAGE, D. J ; IRENE, E. A</creator><creatorcontrib>BUCKNER, J. L ; VITKAVAGE, D. J ; IRENE, E. A ; Department of Chemistry, University of North Carolina, Chapel Hill, North Carolina 27514</creatorcontrib><description>Ellipsometry and Rutherford backscattering/channeling were used to study silicon surfaces modified by low-energy hydrogen, helium, neon, and argon ion bombardment. Ellipsometry was found to be a very sensitive technique for characterization of these samples, able in some cases to simultaneously distinguish the ion identity, incident energy, and total dose experienced by the material. A comparison of the ellipsometric results for the different cases indicates qualitative differences in the physical modifications induced in the silicon surface region under bombardment by different ions. Comparison of the ellipsometric results with Rutherford backscattering/channeling data yielded estimates of the complex refractive index of the silicon layer modified by hydrogen and helium bombardment, showing a general decrease in the refractive index and an increase in the optical extinction coefficient upon bombardment. It was possible to explain these changes, at least qualitatively, by using the Bruggeman effective medium approximation to estimate the volume composition of this layer subject to certain simplifying assumptions. One result of this was the development of the exact solution for the three-component Bruggeman analysis; these equations are derived in the Appendix.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.340392</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>360605 - Materials- Radiation Effects ; ARGON IONS ; BACKSCATTERING ; CHANNELING ; CHARGED PARTICLES ; COLLISIONS ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; CRYSTAL DOPING ; DATA ; ELASTIC SCATTERING ; ELEMENTS ; ELLIPSOMETRY ; Exact sciences and technology ; EXPERIMENTAL DATA ; HELIUM IONS ; HYDROGEN IONS ; INFORMATION ; ION COLLISIONS ; IONS ; MATERIALS SCIENCE ; MEASURING METHODS ; NEON IONS ; NUMERICAL DATA ; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Physics ; RUTHERFORD SCATTERING ; SCATTERING ; SEMIMETALS ; SILICON ; SURFACE PROPERTIES</subject><ispartof>J. Appl. Phys.; (United States), 1988-06, Vol.63 (11), p.5288-5294</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c262t-8d270caa1168a125e5b074484c8796af80ea3fd4b2d0f5360102c3452521d0303</citedby><cites>FETCH-LOGICAL-c262t-8d270caa1168a125e5b074484c8796af80ea3fd4b2d0f5360102c3452521d0303</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7169254$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/5253060$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>BUCKNER, J. L</creatorcontrib><creatorcontrib>VITKAVAGE, D. J</creatorcontrib><creatorcontrib>IRENE, E. A</creatorcontrib><creatorcontrib>Department of Chemistry, University of North Carolina, Chapel Hill, North Carolina 27514</creatorcontrib><title>Ellipsometric and Rutherford backscattering characterization of low-energy hydrogen-, helium-, neon-, and argon-bombarded silicon</title><title>J. Appl. Phys.; (United States)</title><description>Ellipsometry and Rutherford backscattering/channeling were used to study silicon surfaces modified by low-energy hydrogen, helium, neon, and argon ion bombardment. Ellipsometry was found to be a very sensitive technique for characterization of these samples, able in some cases to simultaneously distinguish the ion identity, incident energy, and total dose experienced by the material. A comparison of the ellipsometric results for the different cases indicates qualitative differences in the physical modifications induced in the silicon surface region under bombardment by different ions. Comparison of the ellipsometric results with Rutherford backscattering/channeling data yielded estimates of the complex refractive index of the silicon layer modified by hydrogen and helium bombardment, showing a general decrease in the refractive index and an increase in the optical extinction coefficient upon bombardment. It was possible to explain these changes, at least qualitatively, by using the Bruggeman effective medium approximation to estimate the volume composition of this layer subject to certain simplifying assumptions. One result of this was the development of the exact solution for the three-component Bruggeman analysis; these equations are derived in the Appendix.</description><subject>360605 - Materials- Radiation Effects</subject><subject>ARGON IONS</subject><subject>BACKSCATTERING</subject><subject>CHANNELING</subject><subject>CHARGED PARTICLES</subject><subject>COLLISIONS</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>CRYSTAL DOPING</subject><subject>DATA</subject><subject>ELASTIC SCATTERING</subject><subject>ELEMENTS</subject><subject>ELLIPSOMETRY</subject><subject>Exact sciences and technology</subject><subject>EXPERIMENTAL DATA</subject><subject>HELIUM IONS</subject><subject>HYDROGEN IONS</subject><subject>INFORMATION</subject><subject>ION COLLISIONS</subject><subject>IONS</subject><subject>MATERIALS SCIENCE</subject><subject>MEASURING METHODS</subject><subject>NEON IONS</subject><subject>NUMERICAL DATA</subject><subject>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Physics</subject><subject>RUTHERFORD SCATTERING</subject><subject>SCATTERING</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>SURFACE PROPERTIES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLAzEUhYMoWKvgTwjiwoVTb5J5LqXUBxQE0fVwJ8nMRKdJSVKk7vznzlBxdc-Bj3PhI-SSwYJBLu7YQqQgKn5EZgzKKimyDI7JDICzpKyK6pSchfABwFgpqhn5WQ2D2Qa30dEbSdEq-rqLvfat84o2KD-DxBi1N7ajskePcirfGI2z1LV0cF-Jttp3e9rvlXedtskt7fVgdpsxWO2mPu2i78bcuE2DXmlFgxmMdPacnLQ4BH3xd-fk_WH1tnxK1i-Pz8v7dSJ5zmNSKl6ARGQsL5HxTGcNFGlaprIsqhzbEjSKVqUNV9BmIgcGXIo04xlnCgSIObk67LoQTR2kiVr243-rZaxHTEA-QTcHSHoXgtdtvfVmg35fM6gnvzWrD35H9PqAbnFUNLQerTThny9YXvEsFb8Nwnn7</recordid><startdate>19880601</startdate><enddate>19880601</enddate><creator>BUCKNER, J. L</creator><creator>VITKAVAGE, D. J</creator><creator>IRENE, E. A</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19880601</creationdate><title>Ellipsometric and Rutherford backscattering characterization of low-energy hydrogen-, helium-, neon-, and argon-bombarded silicon</title><author>BUCKNER, J. L ; VITKAVAGE, D. J ; IRENE, E. A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c262t-8d270caa1168a125e5b074484c8796af80ea3fd4b2d0f5360102c3452521d0303</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>360605 - Materials- Radiation Effects</topic><topic>ARGON IONS</topic><topic>BACKSCATTERING</topic><topic>CHANNELING</topic><topic>CHARGED PARTICLES</topic><topic>COLLISIONS</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>CRYSTAL DOPING</topic><topic>DATA</topic><topic>ELASTIC SCATTERING</topic><topic>ELEMENTS</topic><topic>ELLIPSOMETRY</topic><topic>Exact sciences and technology</topic><topic>EXPERIMENTAL DATA</topic><topic>HELIUM IONS</topic><topic>HYDROGEN IONS</topic><topic>INFORMATION</topic><topic>ION COLLISIONS</topic><topic>IONS</topic><topic>MATERIALS SCIENCE</topic><topic>MEASURING METHODS</topic><topic>NEON IONS</topic><topic>NUMERICAL DATA</topic><topic>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Physics</topic><topic>RUTHERFORD SCATTERING</topic><topic>SCATTERING</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>SURFACE PROPERTIES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BUCKNER, J. L</creatorcontrib><creatorcontrib>VITKAVAGE, D. J</creatorcontrib><creatorcontrib>IRENE, E. A</creatorcontrib><creatorcontrib>Department of Chemistry, University of North Carolina, Chapel Hill, North Carolina 27514</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Phys.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BUCKNER, J. L</au><au>VITKAVAGE, D. J</au><au>IRENE, E. A</au><aucorp>Department of Chemistry, University of North Carolina, Chapel Hill, North Carolina 27514</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ellipsometric and Rutherford backscattering characterization of low-energy hydrogen-, helium-, neon-, and argon-bombarded silicon</atitle><jtitle>J. Appl. Phys.; (United States)</jtitle><date>1988-06-01</date><risdate>1988</risdate><volume>63</volume><issue>11</issue><spage>5288</spage><epage>5294</epage><pages>5288-5294</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Ellipsometry and Rutherford backscattering/channeling were used to study silicon surfaces modified by low-energy hydrogen, helium, neon, and argon ion bombardment. Ellipsometry was found to be a very sensitive technique for characterization of these samples, able in some cases to simultaneously distinguish the ion identity, incident energy, and total dose experienced by the material. A comparison of the ellipsometric results for the different cases indicates qualitative differences in the physical modifications induced in the silicon surface region under bombardment by different ions. Comparison of the ellipsometric results with Rutherford backscattering/channeling data yielded estimates of the complex refractive index of the silicon layer modified by hydrogen and helium bombardment, showing a general decrease in the refractive index and an increase in the optical extinction coefficient upon bombardment. It was possible to explain these changes, at least qualitatively, by using the Bruggeman effective medium approximation to estimate the volume composition of this layer subject to certain simplifying assumptions. One result of this was the development of the exact solution for the three-component Bruggeman analysis; these equations are derived in the Appendix.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.340392</doi><tpages>7</tpages></addata></record> |
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| ispartof | J. Appl. Phys.; (United States), 1988-06, Vol.63 (11), p.5288-5294 |
| issn | 0021-8979 1089-7550 |
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| source | AIP Digital Archive |
| subjects | 360605 - Materials- Radiation Effects ARGON IONS BACKSCATTERING CHANNELING CHARGED PARTICLES COLLISIONS Condensed matter: electronic structure, electrical, magnetic, and optical properties CRYSTAL DOPING DATA ELASTIC SCATTERING ELEMENTS ELLIPSOMETRY Exact sciences and technology EXPERIMENTAL DATA HELIUM IONS HYDROGEN IONS INFORMATION ION COLLISIONS IONS MATERIALS SCIENCE MEASURING METHODS NEON IONS NUMERICAL DATA Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics RUTHERFORD SCATTERING SCATTERING SEMIMETALS SILICON SURFACE PROPERTIES |
| title | Ellipsometric and Rutherford backscattering characterization of low-energy hydrogen-, helium-, neon-, and argon-bombarded silicon |
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