Studies of boron on the arsenic site in electron-irradiated GaAs
The introduction of boron on the arsenic site in gallium arsenide, as monitored by the strength of its local vibrational modes (LVM) at 601.7 and 628.3 cm−1, has been observed as a function of 2 MeV electron fluence. Simultaneous monitoring of the strength of the 1S-2P electronic transitions of the...
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| Veröffentlicht in: | J. Appl. Phys.; (United States) 1988-06, Vol.63 (12), p.5699-5702 |
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| container_issue | 12 |
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| container_title | J. Appl. Phys.; (United States) |
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| creator | MOORE, W. J HAWKINS, R. L |
| description | The introduction of boron on the arsenic site in gallium arsenide, as monitored by the strength of its local vibrational modes (LVM) at 601.7 and 628.3 cm−1, has been observed as a function of 2 MeV electron fluence. Simultaneous monitoring of the strength of the 1S-2P electronic transitions of the neutral shallow acceptors and of the neutral 78 meV acceptor and its singly ionized 203 meV level provides an accurate knowledge of the position of the Fermi level throughout most of the irradiation sequence. The results are inconsistent with previous models for the formation of boron on the arsenic site. We propose a model based on enhanced boron diffusion when the Fermi level lies above 78 meV. A compensation rate for electron irradiation, an introduction rate for the BAs center, and an infrared cross section for the BAs LVM are determined. |
| doi_str_mv | 10.1063/1.340306 |
| format | Article |
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J ; HAWKINS, R. L</creator><creatorcontrib>MOORE, W. J ; HAWKINS, R. L ; Naval Research Laboratory, Washington, DC 20375</creatorcontrib><description>The introduction of boron on the arsenic site in gallium arsenide, as monitored by the strength of its local vibrational modes (LVM) at 601.7 and 628.3 cm−1, has been observed as a function of 2 MeV electron fluence. Simultaneous monitoring of the strength of the 1S-2P electronic transitions of the neutral shallow acceptors and of the neutral 78 meV acceptor and its singly ionized 203 meV level provides an accurate knowledge of the position of the Fermi level throughout most of the irradiation sequence. The results are inconsistent with previous models for the formation of boron on the arsenic site. We propose a model based on enhanced boron diffusion when the Fermi level lies above 78 meV. A compensation rate for electron irradiation, an introduction rate for the BAs center, and an infrared cross section for the BAs LVM are determined.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.340306</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>360602 - Other Materials- Structure & Phase Studies ; 360605 - Materials- Radiation Effects ; ARSENIC COMPOUNDS ; ARSENIDES ; BORON ; COLLISIONS ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; DATA ; ELECTRON COLLISIONS ; ELEMENTS ; ENERGY LEVELS ; ENERGY RANGE ; Exact sciences and technology ; EXCITED STATES ; EXPERIMENTAL DATA ; FERMI LEVEL ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; INFORMATION ; ION IMPLANTATION ; MATERIALS SCIENCE ; MATHEMATICAL MODELS ; MEV RANGE ; MEV RANGE 01-10 ; NUMERICAL DATA ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Physics ; PNICTIDES ; SEMIMETALS ; SUBSTRATES ; VIBRATIONAL STATES</subject><ispartof>J. Appl. Phys.; (United States), 1988-06, Vol.63 (12), p.5699-5702</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c317t-729946f76efe58bd87bb74af33d695ec8b598eb5150e68a87ede09207df113483</citedby><cites>FETCH-LOGICAL-c317t-729946f76efe58bd87bb74af33d695ec8b598eb5150e68a87ede09207df113483</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7164782$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/5220431$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>MOORE, W. J</creatorcontrib><creatorcontrib>HAWKINS, R. L</creatorcontrib><creatorcontrib>Naval Research Laboratory, Washington, DC 20375</creatorcontrib><title>Studies of boron on the arsenic site in electron-irradiated GaAs</title><title>J. Appl. Phys.; (United States)</title><description>The introduction of boron on the arsenic site in gallium arsenide, as monitored by the strength of its local vibrational modes (LVM) at 601.7 and 628.3 cm−1, has been observed as a function of 2 MeV electron fluence. Simultaneous monitoring of the strength of the 1S-2P electronic transitions of the neutral shallow acceptors and of the neutral 78 meV acceptor and its singly ionized 203 meV level provides an accurate knowledge of the position of the Fermi level throughout most of the irradiation sequence. The results are inconsistent with previous models for the formation of boron on the arsenic site. We propose a model based on enhanced boron diffusion when the Fermi level lies above 78 meV. A compensation rate for electron irradiation, an introduction rate for the BAs center, and an infrared cross section for the BAs LVM are determined.</description><subject>360602 - Other Materials- Structure & Phase Studies</subject><subject>360605 - Materials- Radiation Effects</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>BORON</subject><subject>COLLISIONS</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>DATA</subject><subject>ELECTRON COLLISIONS</subject><subject>ELEMENTS</subject><subject>ENERGY LEVELS</subject><subject>ENERGY RANGE</subject><subject>Exact sciences and technology</subject><subject>EXCITED STATES</subject><subject>EXPERIMENTAL DATA</subject><subject>FERMI LEVEL</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>INFORMATION</subject><subject>ION IMPLANTATION</subject><subject>MATERIALS SCIENCE</subject><subject>MATHEMATICAL MODELS</subject><subject>MEV RANGE</subject><subject>MEV RANGE 01-10</subject><subject>NUMERICAL DATA</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>SEMIMETALS</subject><subject>SUBSTRATES</subject><subject>VIBRATIONAL STATES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo90E1LxDAQBuAgCq6r4E8I4sFL15mm-bq5iK7Cggf1XNJ0wkbWdkniwX9vpSIMzGEehpeXsUuEFYISt7gSDQhQR2yBYGylpYRjtgCosTJW21N2lvMHAKIRdsHuXstXHynzMfBuTOPApyk74i5lGqLnORbiceC0J1-mexVTcn10hXq-cet8zk6C22e6-NtL9v748Hb_VG1fNs_3623lBepS6draRgWtKJA0XW901-nGBSF6ZSV500lrqJMogZRxRlNPYGvQfUAUjRFLdjX_HXOJbfZTLL_z4zBMsVpZ19AInNDNjHwac04U2kOKny59twjtbz0ttnM9E72e6cFl7_YhucHH_O81qkabWvwA06piHg</recordid><startdate>19880615</startdate><enddate>19880615</enddate><creator>MOORE, W. J</creator><creator>HAWKINS, R. L</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19880615</creationdate><title>Studies of boron on the arsenic site in electron-irradiated GaAs</title><author>MOORE, W. J ; HAWKINS, R. L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c317t-729946f76efe58bd87bb74af33d695ec8b598eb5150e68a87ede09207df113483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>360602 - Other Materials- Structure & Phase Studies</topic><topic>360605 - Materials- Radiation Effects</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>BORON</topic><topic>COLLISIONS</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>DATA</topic><topic>ELECTRON COLLISIONS</topic><topic>ELEMENTS</topic><topic>ENERGY LEVELS</topic><topic>ENERGY RANGE</topic><topic>Exact sciences and technology</topic><topic>EXCITED STATES</topic><topic>EXPERIMENTAL DATA</topic><topic>FERMI LEVEL</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>INFORMATION</topic><topic>ION IMPLANTATION</topic><topic>MATERIALS SCIENCE</topic><topic>MATHEMATICAL MODELS</topic><topic>MEV RANGE</topic><topic>MEV RANGE 01-10</topic><topic>NUMERICAL DATA</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>SEMIMETALS</topic><topic>SUBSTRATES</topic><topic>VIBRATIONAL STATES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MOORE, W. J</creatorcontrib><creatorcontrib>HAWKINS, R. L</creatorcontrib><creatorcontrib>Naval Research Laboratory, Washington, DC 20375</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Phys.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MOORE, W. J</au><au>HAWKINS, R. L</au><aucorp>Naval Research Laboratory, Washington, DC 20375</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Studies of boron on the arsenic site in electron-irradiated GaAs</atitle><jtitle>J. Appl. Phys.; (United States)</jtitle><date>1988-06-15</date><risdate>1988</risdate><volume>63</volume><issue>12</issue><spage>5699</spage><epage>5702</epage><pages>5699-5702</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The introduction of boron on the arsenic site in gallium arsenide, as monitored by the strength of its local vibrational modes (LVM) at 601.7 and 628.3 cm−1, has been observed as a function of 2 MeV electron fluence. Simultaneous monitoring of the strength of the 1S-2P electronic transitions of the neutral shallow acceptors and of the neutral 78 meV acceptor and its singly ionized 203 meV level provides an accurate knowledge of the position of the Fermi level throughout most of the irradiation sequence. The results are inconsistent with previous models for the formation of boron on the arsenic site. We propose a model based on enhanced boron diffusion when the Fermi level lies above 78 meV. A compensation rate for electron irradiation, an introduction rate for the BAs center, and an infrared cross section for the BAs LVM are determined.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.340306</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | J. Appl. Phys.; (United States), 1988-06, Vol.63 (12), p.5699-5702 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_340306 |
| source | AIP Digital Archive |
| subjects | 360602 - Other Materials- Structure & Phase Studies 360605 - Materials- Radiation Effects ARSENIC COMPOUNDS ARSENIDES BORON COLLISIONS Condensed matter: electronic structure, electrical, magnetic, and optical properties DATA ELECTRON COLLISIONS ELEMENTS ENERGY LEVELS ENERGY RANGE Exact sciences and technology EXCITED STATES EXPERIMENTAL DATA FERMI LEVEL GALLIUM ARSENIDES GALLIUM COMPOUNDS INFORMATION ION IMPLANTATION MATERIALS SCIENCE MATHEMATICAL MODELS MEV RANGE MEV RANGE 01-10 NUMERICAL DATA Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics PNICTIDES SEMIMETALS SUBSTRATES VIBRATIONAL STATES |
| title | Studies of boron on the arsenic site in electron-irradiated GaAs |
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