Quantum capacitance and density of states of graphene
We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly proportional to the quantum capacitance, is found to be significa...
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| Veröffentlicht in: | Applied physics letters 2010-04, Vol.96 (15), p.152104-152104-3 |
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| container_end_page | 152104-3 |
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| container_issue | 15 |
| container_start_page | 152104 |
| container_title | Applied physics letters |
| container_volume | 96 |
| creator | Dröscher, S. Roulleau, P. Molitor, F. Studerus, P. Stampfer, C. Ensslin, K. Ihn, T. |
| description | We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly proportional to the quantum capacitance, is found to be significantly larger than zero at and around the charge neutrality point. This finding is interpreted to be a result of potential fluctuations with amplitudes of the order of 100 meV in good agreement with scanning single-electron transistor measurements on bulk graphene and transport studies on nanoribbons. |
| doi_str_mv | 10.1063/1.3391670 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3391670</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-e5c8fb74adc901d49ae782239b07c5ddcf71a72882794c0b9a3bf8e00ffd86293</originalsourceid><addsrcrecordid>eNp1z01LxDAQgOEgCq6rB_9Brx66ziRtkxw8yOIXLIig5zDNh1bctDTZw_57t2wPXjzNDLwMPIxdI6wQGnGLKyE0NhJO2AJBylIgqlO2AABRNrrGc3aR0vfhrLkQC1a_7Sjm3bawNJDtMkXrC4qucD6mLu-LPhQpU_Zp2j5HGr589JfsLNBP8lfzXLKPx4f39XO5eX16Wd9vSisqnUtfWxVaWZGzGtBVmrxUnAvdgrS1czZIJMmV4lJXFlpNog3KA4TgVMO1WLKb41879imNPphh7LY07g2CmbwGzew9tHfHNk2M3PXx_3hGmz9o8QvAjlxv</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Quantum capacitance and density of states of graphene</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Dröscher, S. ; Roulleau, P. ; Molitor, F. ; Studerus, P. ; Stampfer, C. ; Ensslin, K. ; Ihn, T.</creator><creatorcontrib>Dröscher, S. ; Roulleau, P. ; Molitor, F. ; Studerus, P. ; Stampfer, C. ; Ensslin, K. ; Ihn, T.</creatorcontrib><description>We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly proportional to the quantum capacitance, is found to be significantly larger than zero at and around the charge neutrality point. This finding is interpreted to be a result of potential fluctuations with amplitudes of the order of 100 meV in good agreement with scanning single-electron transistor measurements on bulk graphene and transport studies on nanoribbons.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3391670</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-04, Vol.96 (15), p.152104-152104-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-e5c8fb74adc901d49ae782239b07c5ddcf71a72882794c0b9a3bf8e00ffd86293</citedby><cites>FETCH-LOGICAL-c349t-e5c8fb74adc901d49ae782239b07c5ddcf71a72882794c0b9a3bf8e00ffd86293</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3391670$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Dröscher, S.</creatorcontrib><creatorcontrib>Roulleau, P.</creatorcontrib><creatorcontrib>Molitor, F.</creatorcontrib><creatorcontrib>Studerus, P.</creatorcontrib><creatorcontrib>Stampfer, C.</creatorcontrib><creatorcontrib>Ensslin, K.</creatorcontrib><creatorcontrib>Ihn, T.</creatorcontrib><title>Quantum capacitance and density of states of graphene</title><title>Applied physics letters</title><description>We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly proportional to the quantum capacitance, is found to be significantly larger than zero at and around the charge neutrality point. This finding is interpreted to be a result of potential fluctuations with amplitudes of the order of 100 meV in good agreement with scanning single-electron transistor measurements on bulk graphene and transport studies on nanoribbons.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1z01LxDAQgOEgCq6rB_9Brx66ziRtkxw8yOIXLIig5zDNh1bctDTZw_57t2wPXjzNDLwMPIxdI6wQGnGLKyE0NhJO2AJBylIgqlO2AABRNrrGc3aR0vfhrLkQC1a_7Sjm3bawNJDtMkXrC4qucD6mLu-LPhQpU_Zp2j5HGr589JfsLNBP8lfzXLKPx4f39XO5eX16Wd9vSisqnUtfWxVaWZGzGtBVmrxUnAvdgrS1czZIJMmV4lJXFlpNog3KA4TgVMO1WLKb41879imNPphh7LY07g2CmbwGzew9tHfHNk2M3PXx_3hGmz9o8QvAjlxv</recordid><startdate>20100412</startdate><enddate>20100412</enddate><creator>Dröscher, S.</creator><creator>Roulleau, P.</creator><creator>Molitor, F.</creator><creator>Studerus, P.</creator><creator>Stampfer, C.</creator><creator>Ensslin, K.</creator><creator>Ihn, T.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100412</creationdate><title>Quantum capacitance and density of states of graphene</title><author>Dröscher, S. ; Roulleau, P. ; Molitor, F. ; Studerus, P. ; Stampfer, C. ; Ensslin, K. ; Ihn, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-e5c8fb74adc901d49ae782239b07c5ddcf71a72882794c0b9a3bf8e00ffd86293</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dröscher, S.</creatorcontrib><creatorcontrib>Roulleau, P.</creatorcontrib><creatorcontrib>Molitor, F.</creatorcontrib><creatorcontrib>Studerus, P.</creatorcontrib><creatorcontrib>Stampfer, C.</creatorcontrib><creatorcontrib>Ensslin, K.</creatorcontrib><creatorcontrib>Ihn, T.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dröscher, S.</au><au>Roulleau, P.</au><au>Molitor, F.</au><au>Studerus, P.</au><au>Stampfer, C.</au><au>Ensslin, K.</au><au>Ihn, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantum capacitance and density of states of graphene</atitle><jtitle>Applied physics letters</jtitle><date>2010-04-12</date><risdate>2010</risdate><volume>96</volume><issue>15</issue><spage>152104</spage><epage>152104-3</epage><pages>152104-152104-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly proportional to the quantum capacitance, is found to be significantly larger than zero at and around the charge neutrality point. This finding is interpreted to be a result of potential fluctuations with amplitudes of the order of 100 meV in good agreement with scanning single-electron transistor measurements on bulk graphene and transport studies on nanoribbons.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3391670</doi></addata></record> |
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| ispartof | Applied physics letters, 2010-04, Vol.96 (15), p.152104-152104-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3391670 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Quantum capacitance and density of states of graphene |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T16%3A08%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Quantum%20capacitance%20and%20density%20of%20states%20of%20graphene&rft.jtitle=Applied%20physics%20letters&rft.au=Dr%C3%B6scher,%20S.&rft.date=2010-04-12&rft.volume=96&rft.issue=15&rft.spage=152104&rft.epage=152104-3&rft.pages=152104-152104-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3391670&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |