Photoluminescence studies of defects and impurities in annealed GaAs

Photoluminescence studies have been performed on undoped and silicon-doped GaAs crystals, which were annealed between 650 and 1000 °C under different arsenic pressures. Samples were also heat treated with the addition of pure elemental Ga, Mn, or Cu. Spectra were taken in the energy range 1.15–1.55...

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Veröffentlicht in:	Journal of applied physics 1986-11, Vol.60 (10), p.3735-3745
Hauptverfasser:	van de Ven, J., Hartmann, W. J. A. M., Giling, L. J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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