A characterization model for constant current stressed voltage-time characteristics of thin thermal oxides grown on silicon substrates
The constant-current-stressed voltage-time (V-t) characteristics of the thin SiO2 films thermally grown on the silicon substrate has been analyzed by using a theoretical model which includes the effects of dynamic trapping (i.e., electron trapping and detrapping), positive charge generation, weak sp...
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| Veröffentlicht in: | Journal of applied physics 1986-12, Vol.60 (11), p.3926-3944 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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