Trapping properties of LiNbO3/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure characterized by temperature dependent conductance measurements

The trapping properties of the ferroelectric LiNbO3/AlGaN/GaN heterostructure capacitors were characterized by temperature dependent capacitance and conductance measurements. In a wide temperature range (200–450 K), two kind of traps were identified by the conductance measurements. One is the interf...

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Veröffentlicht in:	Journal of applied physics 2010-04, Vol.107 (8)
Hauptverfasser:	Zeng, Huizhong, Hao, Lanzhong, Luo, Wenbo, Liao, Xiuwei, Huang, Wen, Lin, Yuan, Li, Yanrong
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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