Film formation mechanisms in the plasma deposition of hydrogenated amorphous silicon

By studying the step coverage of plasma-deposited amorphous silicon and germanium on patterned substrates, we find that the film formation process under device-quality deposition conditions has a substantial component that behaves like a surface rate-limited chemical vapor deposition process, while...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 1986-04, Vol.59 (8), p.2998-3001
Hauptverfasser:	TSAI, C. C, KNIGHTS, J. C, CHANG, G, WACKER, B
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!