Film formation mechanisms in the plasma deposition of hydrogenated amorphous silicon
By studying the step coverage of plasma-deposited amorphous silicon and germanium on patterned substrates, we find that the film formation process under device-quality deposition conditions has a substantial component that behaves like a surface rate-limited chemical vapor deposition process, while...
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| Veröffentlicht in: | Journal of applied physics 1986-04, Vol.59 (8), p.2998-3001 |
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| container_end_page | 3001 |
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| container_issue | 8 |
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| container_title | Journal of applied physics |
| container_volume | 59 |
| creator | TSAI, C. C KNIGHTS, J. C CHANG, G WACKER, B |
| description | By studying the step coverage of plasma-deposited amorphous silicon and germanium on patterned substrates, we find that the film formation process under device-quality deposition conditions has a substantial component that behaves like a surface rate-limited chemical vapor deposition process, while conditions producing defective material are associated with a much more physical-vapor-deposition-like process. An explanation involving surface reactions of SiHx radicals is proposed. |
| doi_str_mv | 10.1063/1.336920 |
| format | Article |
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An explanation involving surface reactions of SiHx radicals is proposed.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.336920</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Journal of applied physics, 1986-04, Vol.59 (8), p.2998-3001</ispartof><rights>1987 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c356t-c0f465239a99d9c551b7170f9f70cc89546f8add6b2b0d464242071d8f7679c93</citedby><cites>FETCH-LOGICAL-c356t-c0f465239a99d9c551b7170f9f70cc89546f8add6b2b0d464242071d8f7679c93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27906,27907</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7951224$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>TSAI, C. 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| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1986-04, Vol.59 (8), p.2998-3001 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_336920 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Film formation mechanisms in the plasma deposition of hydrogenated amorphous silicon |
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