Investigation of the kinetic mechanism for the ion-assisted etching of GaAs in Cl2 using a modulated ion beam

There is increasing technological interest in using Cl2 and Cl-containing compounds in the dry plasma etching of III–V semiconductors. This paper presents a study of the ion-assisted etching of GaAs by Cl2 using a modulated ion beam technique to gain insight into the kinetic mechanism of this proces...

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Veröffentlicht in:	Journal of applied physics 1985-12, Vol.58 (12), p.4670-4678
Hauptverfasser:	MCNEVIN, S. C, BECKER, G. E
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid-fluid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
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