Effects of CdSe shell layer on the electrical properties of nonvolatile memory devices fabricated utilizing core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) layer
Nonvolatile memory devices were fabricated with core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) (PVK) layer to investigate the variations in the electrical properties due to a CdSe shell layer. Capacitance-voltage measurements on Al/CdTe nanoparticles embedded in PVK layer/ p...
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| Veröffentlicht in: | Applied physics letters 2010-03, Vol.96 (12), p.123302-123302-3 |
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| container_end_page | 123302-3 |
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| container_issue | 12 |
| container_start_page | 123302 |
| container_title | Applied physics letters |
| container_volume | 96 |
| creator | Yun, Dong Yeol Jung, Jae Hun Lee, Dea Uk Kim, Tae Whan Ryu, E. D. Kim, S. W. |
| description | Nonvolatile memory devices were fabricated with core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) (PVK) layer to investigate the variations in the electrical properties due to a CdSe shell layer. Capacitance-voltage measurements on Al/CdTe nanoparticles embedded in PVK layer/
p
-Si
devices and on Al/core-shell CdTe-CdSe nanoparticles embedded in PVK layer/
p
-Si
devices at 300 K showed hysteresis behaviors with a flatband voltage shift due to the existence of the CdTe and the CdTe-CdSe nanoparticles. Capacitance-time measurements showed that the retention time for devices fabricated utilizing core-shell CdTe-CdSe nanoparticles was larger than that for devices fabricated utilizing CdTe nanoparticles. |
| doi_str_mv | 10.1063/1.3360215 |
| format | Article |
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p
-Si
devices and on Al/core-shell CdTe-CdSe nanoparticles embedded in PVK layer/
p
-Si
devices at 300 K showed hysteresis behaviors with a flatband voltage shift due to the existence of the CdTe and the CdTe-CdSe nanoparticles. Capacitance-time measurements showed that the retention time for devices fabricated utilizing core-shell CdTe-CdSe nanoparticles was larger than that for devices fabricated utilizing CdTe nanoparticles.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3360215</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-03, Vol.96 (12), p.123302-123302-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-4884652dc7e2caded07db91afbbff2b224a37f674585b43810b910d3153a79f3</citedby><cites>FETCH-LOGICAL-c284t-4884652dc7e2caded07db91afbbff2b224a37f674585b43810b910d3153a79f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3360215$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76353,76359</link.rule.ids></links><search><creatorcontrib>Yun, Dong Yeol</creatorcontrib><creatorcontrib>Jung, Jae Hun</creatorcontrib><creatorcontrib>Lee, Dea Uk</creatorcontrib><creatorcontrib>Kim, Tae Whan</creatorcontrib><creatorcontrib>Ryu, E. D.</creatorcontrib><creatorcontrib>Kim, S. W.</creatorcontrib><title>Effects of CdSe shell layer on the electrical properties of nonvolatile memory devices fabricated utilizing core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) layer</title><title>Applied physics letters</title><description>Nonvolatile memory devices were fabricated with core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) (PVK) layer to investigate the variations in the electrical properties due to a CdSe shell layer. Capacitance-voltage measurements on Al/CdTe nanoparticles embedded in PVK layer/
p
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devices and on Al/core-shell CdTe-CdSe nanoparticles embedded in PVK layer/
p
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devices at 300 K showed hysteresis behaviors with a flatband voltage shift due to the existence of the CdTe and the CdTe-CdSe nanoparticles. Capacitance-time measurements showed that the retention time for devices fabricated utilizing core-shell CdTe-CdSe nanoparticles was larger than that for devices fabricated utilizing CdTe nanoparticles.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kMlOwzAQhi0EEqVw4A18pIcUO856QUJRWaRKHOg9cuwxNXLsyAmV0jfj7XCaXjmNRv8yow-he0rWlGTska4Zy0hM0wu0oCTPI0ZpcYkWhBAWZWVKr9FN33-HNY0ZW6DfjVIghh47hSv5CbjfgzHY8BE8dhYPe8BggsNrwQ3uvOvADxpOAevswRk-aAO4hdb5EUs4aBFUxZspMYDEP0HXR22_sHAeovlAJXcQnQ5abl3HQ6cwIQdtA1KGlLaY486Z8aGMDtqORnDf8KMzsJq_u0VXipse7s5ziXYvm131Fm0_Xt-r520k4iIZoqQokiyNpcghFjw0k1w2JeWqaZSKmzhOOMtVlidpkTYJKygJKpGMpoznpWJLtJprhXd970HVndct92NNST0hr2l9Rh68T7O3F3oIWJz933zmXjtVTxjqCQv7A2V_jLc</recordid><startdate>20100322</startdate><enddate>20100322</enddate><creator>Yun, Dong Yeol</creator><creator>Jung, Jae Hun</creator><creator>Lee, Dea Uk</creator><creator>Kim, Tae Whan</creator><creator>Ryu, E. D.</creator><creator>Kim, S. W.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100322</creationdate><title>Effects of CdSe shell layer on the electrical properties of nonvolatile memory devices fabricated utilizing core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) layer</title><author>Yun, Dong Yeol ; Jung, Jae Hun ; Lee, Dea Uk ; Kim, Tae Whan ; Ryu, E. D. ; Kim, S. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-4884652dc7e2caded07db91afbbff2b224a37f674585b43810b910d3153a79f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yun, Dong Yeol</creatorcontrib><creatorcontrib>Jung, Jae Hun</creatorcontrib><creatorcontrib>Lee, Dea Uk</creatorcontrib><creatorcontrib>Kim, Tae Whan</creatorcontrib><creatorcontrib>Ryu, E. D.</creatorcontrib><creatorcontrib>Kim, S. W.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yun, Dong Yeol</au><au>Jung, Jae Hun</au><au>Lee, Dea Uk</au><au>Kim, Tae Whan</au><au>Ryu, E. D.</au><au>Kim, S. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of CdSe shell layer on the electrical properties of nonvolatile memory devices fabricated utilizing core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) layer</atitle><jtitle>Applied physics letters</jtitle><date>2010-03-22</date><risdate>2010</risdate><volume>96</volume><issue>12</issue><spage>123302</spage><epage>123302-3</epage><pages>123302-123302-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Nonvolatile memory devices were fabricated with core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) (PVK) layer to investigate the variations in the electrical properties due to a CdSe shell layer. Capacitance-voltage measurements on Al/CdTe nanoparticles embedded in PVK layer/
p
-Si
devices and on Al/core-shell CdTe-CdSe nanoparticles embedded in PVK layer/
p
-Si
devices at 300 K showed hysteresis behaviors with a flatband voltage shift due to the existence of the CdTe and the CdTe-CdSe nanoparticles. Capacitance-time measurements showed that the retention time for devices fabricated utilizing core-shell CdTe-CdSe nanoparticles was larger than that for devices fabricated utilizing CdTe nanoparticles.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3360215</doi></addata></record> |
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| ispartof | Applied physics letters, 2010-03, Vol.96 (12), p.123302-123302-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3360215 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Effects of CdSe shell layer on the electrical properties of nonvolatile memory devices fabricated utilizing core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) layer |
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