Contactless tunneling to semiconductors

We present current versus voltage characteristics for two metal-insulator-semiconductor systems: lead-insulator-mercury cadmium telluride and silver-insulator-silicon. A previously developed new technique allows us to suspend the metal

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 1985-01, Vol.58 (1), p.392-396
Hauptverfasser:	SONNENFELD, R, MORELAND, J, HANSMA, P. K, ADAMS, A, KVAAS, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We present current versus voltage characteristics for two metal-insulator-semiconductor systems: lead-insulator-mercury cadmium telluride and silver-insulator-silicon. A previously developed new technique allows us to suspend the metal
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.335691