Theory of deep level trap effects on generation-recombination noise in HgCdTe photoconductors

We present a theory of the effect of deep level centers on the generation-recombination (g-r) noise and responsivity of an intrinsic photoconductor. The deep level centers can influence the g-r noise and responsivity in three main ways: (i) they can shorten the bulk carrier lifetime by Shockley–Read–Hall recombination; (ii) for some values of the capture cross sections, deep level densities, and temperature, the deep levels can trap a significant fraction of the photogenerated minority carriers. This trapping reduces the effective minority carrier mobility and diffusivity and thus reduces the effect of carrier sweep out on both g-r noise and responsivity; (iii) the deep level centers add a new thermal noise source, which results from fluctuations between bound and free carriers. The strength of this new noise source decreases with decreasing temperature at a slower rate than band-to-band thermal g-r noise. Calculations have been performed for a X=0.21, n-type Hg1−xCdxTe photoconductor using the parameters of a commonly occurring deep level center in this material. We find that for typical operating conditions photoconductive detector performance begins to degrade as the deep level density begins to exceed 1016 cm−3.