Analysis of polycrystalline silicon diffusion sources by secondary ion mass spectrometry

Polycrystalline silicon diffusion sources have been analyzed using secondary ion mass spectrometry. Polysilicon films were grown by standard low-pressure chemical vapor deposition and doped with As, P, or B by ion implantation. Although dopant segregation at the poly-Si/single-crystal-silicon interf...

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Veröffentlicht in:	Journal of applied physics 1985-12, Vol.58 (11), p.4036-4042
Hauptverfasser:	SCHABER, H, CRIEGERN, R. V, WEITZEL, I
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion of impurities Exact sciences and technology Physics Transport properties of condensed matter (nonelectronic)
Online-Zugang:	Volltext
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