Properties of Al/p-CdTe schottky barriers

Al/p-CdTe Schottky barriers diodes were prepared from the Te (1̄1̄1̄) face of lightly doped p-type CdTe single crystals. The characteristics of the diodes have been found to depend strongly on the surface preparation of CdTe. The current-voltage characteristics of diodes prepared from Br2-CH3OH etch...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1985-12, Vol.58 (11), p.4296-4299
Hauptverfasser:	CHU, T. L, CHU, S. S, ANG, S. T
Format:	Artikel
Sprache:	eng
Schlagworte:	420800 - Engineering- Electronic Circuits & Devices- (-1989) ALUMINIUM ANNEALING Applied sciences BROMINE CADMIUM COMPOUNDS CADMIUM TELLURIDES CHALCOGENIDES DATA DIFFUSION Diodes ELECTRIC CONDUCTIVITY ELECTRIC POTENTIAL ELECTRICAL PROPERTIES Electronics ELEMENTS ENGINEERING ETCHING Exact sciences and technology EXPERIMENTAL DATA FABRICATION HALOGENS HEAT TREATMENTS INFORMATION METALS NONMETALS NUMERICAL DATA PHYSICAL PROPERTIES POTENTIALS SCHOTTKY BARRIER DIODES SEMICONDUCTOR DEVICES SEMICONDUCTOR DIODES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices STOICHIOMETRY SURFACE FINISHING TELLURIDES TELLURIUM COMPOUNDS TUNNEL EFFECT
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