Effects of indium diffusion on the properties of ZnSe: Mn dc thin-film electroluminescent devices
ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by a molecular beam growth method on glass substrates coated with transparent conductive oxide. We found that the EL properties were affected by the grade of the oxide. The EL properties were found to depend on the range of indium di...
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| Veröffentlicht in: | Journal of applied physics 1985-01, Vol.57 (8), p.2905-2908 |
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| container_title | Journal of applied physics |
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| creator | KOBAYASHI, M MINO, N KONAGAI, M TAKAHASHI, K |
| description | ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by a molecular beam growth method on glass substrates coated with transparent conductive oxide. We found that the EL properties were affected by the grade of the oxide. The EL properties were found to depend on the range of indium diffusion from the oxide to the ZnSe:Mn host layer. The effective thickness of the host layer was varied by the In diffusion. Based upon these results, we have proposed a new type of dc thin-film EL cell, namely an Al/ZnSe:Mn/ZnSe:In/oxide structure. A ZnSe:In layer was prepared as a buffer layer that would improve the crystallinity of the ZnSe:Mn host layer. |
| doi_str_mv | 10.1063/1.335229 |
| format | Article |
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We found that the EL properties were affected by the grade of the oxide. The EL properties were found to depend on the range of indium diffusion from the oxide to the ZnSe:Mn host layer. The effective thickness of the host layer was varied by the In diffusion. Based upon these results, we have proposed a new type of dc thin-film EL cell, namely an Al/ZnSe:Mn/ZnSe:In/oxide structure. A ZnSe:In layer was prepared as a buffer layer that would improve the crystallinity of the ZnSe:Mn host layer.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.335229</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Applied sciences ; Display ; Electronics ; Exact sciences and technology ; Other techniques and industries</subject><ispartof>Journal of applied physics, 1985-01, Vol.57 (8), p.2905-2908</ispartof><rights>1986 INIST-CNRS</rights><rights>1985 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-b6bb2689057925f66e56782b139964d9855db3d87ad4d38c2f794b73654313cd3</citedby><cites>FETCH-LOGICAL-c285t-b6bb2689057925f66e56782b139964d9855db3d87ad4d38c2f794b73654313cd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27915,27916</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8837781$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=9258754$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KOBAYASHI, M</creatorcontrib><creatorcontrib>MINO, N</creatorcontrib><creatorcontrib>KONAGAI, M</creatorcontrib><creatorcontrib>TAKAHASHI, K</creatorcontrib><title>Effects of indium diffusion on the properties of ZnSe: Mn dc thin-film electroluminescent devices</title><title>Journal of applied physics</title><description>ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by a molecular beam growth method on glass substrates coated with transparent conductive oxide. We found that the EL properties were affected by the grade of the oxide. The EL properties were found to depend on the range of indium diffusion from the oxide to the ZnSe:Mn host layer. The effective thickness of the host layer was varied by the In diffusion. Based upon these results, we have proposed a new type of dc thin-film EL cell, namely an Al/ZnSe:Mn/ZnSe:In/oxide structure. A ZnSe:In layer was prepared as a buffer layer that would improve the crystallinity of the ZnSe:Mn host layer.</description><subject>Applied sciences</subject><subject>Display</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Other techniques and industries</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLxDAUhYMoOD7An5CFCzcd82iSG3cyjA8YcaFu3JQ0D4y0aUk6gv_e6ohb4cBdnI_vwkHojJIlJZJf0iXngjG9hxaUgK6UEGQfLQhhtAKt9CE6KuWdEEqB6wUy6xC8nQoeAo7JxW2PXQxhW-KQ8JzpzeMxD6PPU_Q_1Gt68lf4IWFn5zamKsSux76bLXnotn1MvlifJuz8R7S-nKCDYLriT3_vMXq5WT-v7qrN4-396npTWQZiqlrZtkyCJkJpJoKUXkgFrKVca1k7DUK4ljtQxtWOg2VB6bpVXIqaU24dP0YXO6_NQynZh2bMsTf5s6Gk-Z6moc1umhk936GjKdZ0IZtkY_nj5_-gZu0_GABXCij_Ajdebss</recordid><startdate>19850101</startdate><enddate>19850101</enddate><creator>KOBAYASHI, M</creator><creator>MINO, N</creator><creator>KONAGAI, M</creator><creator>TAKAHASHI, K</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19850101</creationdate><title>Effects of indium diffusion on the properties of ZnSe: Mn dc thin-film electroluminescent devices</title><author>KOBAYASHI, M ; MINO, N ; KONAGAI, M ; TAKAHASHI, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-b6bb2689057925f66e56782b139964d9855db3d87ad4d38c2f794b73654313cd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Applied sciences</topic><topic>Display</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Other techniques and industries</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KOBAYASHI, M</creatorcontrib><creatorcontrib>MINO, N</creatorcontrib><creatorcontrib>KONAGAI, M</creatorcontrib><creatorcontrib>TAKAHASHI, K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KOBAYASHI, M</au><au>MINO, N</au><au>KONAGAI, M</au><au>TAKAHASHI, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of indium diffusion on the properties of ZnSe: Mn dc thin-film electroluminescent devices</atitle><jtitle>Journal of applied physics</jtitle><date>1985-01-01</date><risdate>1985</risdate><volume>57</volume><issue>8</issue><spage>2905</spage><epage>2908</epage><pages>2905-2908</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by a molecular beam growth method on glass substrates coated with transparent conductive oxide. We found that the EL properties were affected by the grade of the oxide. The EL properties were found to depend on the range of indium diffusion from the oxide to the ZnSe:Mn host layer. The effective thickness of the host layer was varied by the In diffusion. Based upon these results, we have proposed a new type of dc thin-film EL cell, namely an Al/ZnSe:Mn/ZnSe:In/oxide structure. A ZnSe:In layer was prepared as a buffer layer that would improve the crystallinity of the ZnSe:Mn host layer.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.335229</doi><tpages>4</tpages></addata></record> |
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| ispartof | Journal of applied physics, 1985-01, Vol.57 (8), p.2905-2908 |
| issn | 0021-8979 1089-7550 |
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| source | AIP_美国物理联合会期刊回溯（NSTL购买） |
| subjects | Applied sciences Display Electronics Exact sciences and technology Other techniques and industries |
| title | Effects of indium diffusion on the properties of ZnSe: Mn dc thin-film electroluminescent devices |
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