Probability density function of the potential energy due to random impurities in semiconductors

We have calculated the probability density function of the potential energy for the case of heavily doped uncompensated semiconductors due to randomly located ionized impurities. The approach combines both analytical and numerical techniques to form a piecewise approximation of P(E) and can be used...

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Veröffentlicht in:	Journal of applied physics 1985-01, Vol.57 (4), p.1147-1151
Hauptverfasser:	SCRIBNER, D. A, LEOPOLD, L
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics
Online-Zugang:	Volltext
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