High-resolution measurements of localized vibrational mode infrared absorption of Si-doped GaAs

The infrared absorption due to excitation of localized vibrational modes (LVM) involving Si impurities in GaAs was measured at 80 K under high-resolution conditions for 1×1018 cm−3≤[Si]≤5×1019 cm−3. Electrical compensation by Li diffusion or electron irradiation resulted in no observable differences...

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Veröffentlicht in:	Journal of applied physics 1984-08, Vol.56 (4), p.890-898
Hauptverfasser:	THEIS, W. M, SPITZER, W. G
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics
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