Low resistance polycrystalline silicon by boron or arsenic implantation and thermal crystallization of amorphously deposited films

Polycrystalline silicon films with high surface smoothness, good step coverage, and a relatively large grain size of ∼0.3 μm have been prepared by low-pressure chemical vapor deposition in the amorphous state and subsequent crystallization in a furnace. The final grain size achieved does not signifi...

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Veröffentlicht in:	Journal of applied physics 1984-08, Vol.56 (4), p.1233-1236
Hauptverfasser:	BECKER, F. S, OPPOLZER, H, WEITZEL, I, EICHERMÜLLER, H, SCHABER, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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