Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions

Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions

We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have de...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2010-03, Vol.96 (10), p.102514-102514-3
Hauptverfasser: Hakimi, A. M. H. R., Banerjee, N., Aziz, A., Robinson, J. W. A., Blamire, M. G.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 102514-3
container_issue 10
container_start_page 102514
container_title Applied physics letters
container_volume 96
creator Hakimi, A. M. H. R.
Banerjee, N.
Aziz, A.
Robinson, J. W. A.
Blamire, M. G.
description We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 ± 1   nm in semiconducting ITO at room temperature.
doi_str_mv 10.1063/1.3339882
format Article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3339882</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-8c997e0c1b7339f14a036ff019e38bc6f5f195508f19173a23d6d146567867143</originalsourceid><addsrcrecordid>eNp1kE9LAzEQxYMoWKsHv0GuHtZmOrv5c_AgS9VCoZd6Dtts0qa02bLZLfbbm9qCIHh6zMyPx7xHyCOwZ2AcR_CMiErK8RUZABMiQwB5TQaMMcy4KuCW3MW4SWMxRhyQ4yR2fld1Pqxot7Y07n2gtXeuj74JdGvDqlvTxtFod940oe7NDzsNte93dJHo-ZevLU18WpfN6O9lVDZn10O1PVi66UNyaEK8Jzeu2kb7cNEh-XybLMqPbDZ_n5avs8xgrrpMGqWEZQaWIgVzkFcMuXMMlEW5NNwVDlRRMJkEBFZjrHkNOS-4kFxAjkPydPY1bRNja53etylxe9TA9KkzDfrSWWJfzmw0vqtOb_4P_xanU3H6FBG_ARYlc_0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Hakimi, A. M. H. R. ; Banerjee, N. ; Aziz, A. ; Robinson, J. W. A. ; Blamire, M. G.</creator><creatorcontrib>Hakimi, A. M. H. R. ; Banerjee, N. ; Aziz, A. ; Robinson, J. W. A. ; Blamire, M. G.</creatorcontrib><description>We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 ± 1   nm in semiconducting ITO at room temperature.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3339882</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-03, Vol.96 (10), p.102514-102514-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-8c997e0c1b7339f14a036ff019e38bc6f5f195508f19173a23d6d146567867143</citedby><cites>FETCH-LOGICAL-c349t-8c997e0c1b7339f14a036ff019e38bc6f5f195508f19173a23d6d146567867143</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3339882$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Hakimi, A. M. H. R.</creatorcontrib><creatorcontrib>Banerjee, N.</creatorcontrib><creatorcontrib>Aziz, A.</creatorcontrib><creatorcontrib>Robinson, J. W. A.</creatorcontrib><creatorcontrib>Blamire, M. G.</creatorcontrib><title>Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions</title><title>Applied physics letters</title><description>We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 ± 1   nm in semiconducting ITO at room temperature.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kE9LAzEQxYMoWKsHv0GuHtZmOrv5c_AgS9VCoZd6Dtts0qa02bLZLfbbm9qCIHh6zMyPx7xHyCOwZ2AcR_CMiErK8RUZABMiQwB5TQaMMcy4KuCW3MW4SWMxRhyQ4yR2fld1Pqxot7Y07n2gtXeuj74JdGvDqlvTxtFod940oe7NDzsNte93dJHo-ZevLU18WpfN6O9lVDZn10O1PVi66UNyaEK8Jzeu2kb7cNEh-XybLMqPbDZ_n5avs8xgrrpMGqWEZQaWIgVzkFcMuXMMlEW5NNwVDlRRMJkEBFZjrHkNOS-4kFxAjkPydPY1bRNja53etylxe9TA9KkzDfrSWWJfzmw0vqtOb_4P_xanU3H6FBG_ARYlc_0</recordid><startdate>20100308</startdate><enddate>20100308</enddate><creator>Hakimi, A. M. H. R.</creator><creator>Banerjee, N.</creator><creator>Aziz, A.</creator><creator>Robinson, J. W. A.</creator><creator>Blamire, M. G.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100308</creationdate><title>Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions</title><author>Hakimi, A. M. H. R. ; Banerjee, N. ; Aziz, A. ; Robinson, J. W. A. ; Blamire, M. G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-8c997e0c1b7339f14a036ff019e38bc6f5f195508f19173a23d6d146567867143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hakimi, A. M. H. R.</creatorcontrib><creatorcontrib>Banerjee, N.</creatorcontrib><creatorcontrib>Aziz, A.</creatorcontrib><creatorcontrib>Robinson, J. W. A.</creatorcontrib><creatorcontrib>Blamire, M. G.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hakimi, A. M. H. R.</au><au>Banerjee, N.</au><au>Aziz, A.</au><au>Robinson, J. W. A.</au><au>Blamire, M. G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions</atitle><jtitle>Applied physics letters</jtitle><date>2010-03-08</date><risdate>2010</risdate><volume>96</volume><issue>10</issue><spage>102514</spage><epage>102514-3</epage><pages>102514-102514-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 ± 1   nm in semiconducting ITO at room temperature.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3339882</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2010-03, Vol.96 (10), p.102514-102514-3
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_3339882
source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
title Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T23%3A36%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Estimating%20the%20spin%20diffusion%20length%20of%20semiconducting%20Indium%20Tin%20Oxide%20using%20Co/Indium%20Tin%20Oxide/Co%20spin%20valve%20junctions&rft.jtitle=Applied%20physics%20letters&rft.au=Hakimi,%20A.%20M.%20H.%20R.&rft.date=2010-03-08&rft.volume=96&rft.issue=10&rft.spage=102514&rft.epage=102514-3&rft.pages=102514-102514-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3339882&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true