Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions

Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions

We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have de...

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Veröffentlicht in:Applied physics letters 2010-03, Vol.96 (10), p.102514-102514-3
Hauptverfasser: Hakimi, A. M. H. R., Banerjee, N., Aziz, A., Robinson, J. W. A., Blamire, M. G.
Format: Artikel
Sprache:eng
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Zusammenfassung:We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 ± 1   nm in semiconducting ITO at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3339882