Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation

Dielectric functions of partly amorphized GaAs layers produced by deep ion implantation of different doses of 270-keV As+ ions in crystalline (c-) GaAs have been measured from 1.5 to 6.0 eV by spectroscopic ellipsometry. We show that these dielectric functions cannot be described as physical mixture...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 1984-11, Vol.56 (10), p.2664-2671
Hauptverfasser:	ERMAN, M, THEETEN, J. B, CHAMBON, P, KELSO, S. M, ASPNES, D. E
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics Visible and ultraviolet spectra
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!