Evolution of barrier-resistance noise in CoFeB/MgO/CoFeB tunnel junctions during annealing

The low-frequency resistance noise in sputtered-deposited magnetic tunnel junctions with MgO barriers has been measured as a function of annealing time at different annealing temperatures. The noise has a 1 / f spectrum and it is quantified by a Hooge-like parameter α given in units of μ m 2 . Unann...

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Veröffentlicht in:	Journal of applied physics 2010-03, Vol.107 (6), p.064502-064502-7
Hauptverfasser:	Stearrett, Ryan, Wang, W. G., Shah, L. R., Gokce, Aisha, Xiao, J. Q., Nowak, E. R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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