Creation and annealing kinetics of magnetic oxygen vacancy centers in SiO2

Dose and energy dependence of the E′1 defect density/cm2 created in SiO2 by implantation of Ar ions has been determined by electron paramagnetic resonance. A dose dependent region followed by a saturated, dose independent region is found for all energies studied (50–150 keV). In the low dose limit f...

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Veröffentlicht in:	Journal of applied physics 1983-07, Vol.54 (7), p.3833-3838
Hauptverfasser:	Devine, R. A. B., Golanski, A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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